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DMN66D0LDW-7

P1-P3P4-P5
DMN66D0LDW
Document number: DS31232 Rev. 6 - 2
1 of 5
www.diodes.com
February 2014
© Diodes Incorporated
DMN66D0LDW
NEW PRODUCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
Package
I
D
T
A
= +25°C
60V
6Ω @ V
GS
= 5V
SOT363
90mA
5Ω @ V
GS
= 10V
115mA
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Load Switch
Features and Benefits
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Small Surface Mount Package
• ESD Protected Gate, 1KV (HBM)
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN66D0LDW-7 SOT363 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT363
Top View
Top View
Internal Schematic
S
1
D
1
D
2
S
2
G
1
G
2
MN1
MN1
YM
YM
ESD PROTECTED TO 1kV
MN1= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
MN1
MN1
YM
YM
e3
DMN66D0LDW
Document number: DS31232 Rev. 6 - 2
2 of 5
www.diodes.com
February 2014
© Diodes Incorporated
DMN66D0LDW
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
60 V
Gate-Source Voltage (Note 5) Continuous
V
GSS
±20 V
Drain Current (Note 5) Continuous
Continuous @ +100°C
Pulsed
I
D
115
73
800
mA
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
Derating above T
A
= +25°C (Note 5)
P
D
250
1.6
mW
mW/°C
Thermal Resistance, Junction to Ambient
R
θ
JA
500 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 70
⎯
V
V
GS
= 0V,
I
D
= 10µA
Zero Gate Voltage Drain Current @ T
C
= +25°C
@ T
C
= +125°C
I
DSS
⎯ ⎯
1.0
500
µA
V
DS
= 60V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
⎯ ⎯
±5
μA
V
GS
=
±20V,
V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1.2
⎯
2.0 V
V
DS
= V
GS
,
I
D
= 250μA
Static Drain-Source On-Resistance @ T
J
= +25°C
@ T
J
= +125°C
R
DS (ON)
⎯
3.5
3.0
6
5
Ω
V
GS
= 5.0V,
I
D
=
0.115A
V
GS
= 10V, I
D
=
0.115A
Forward Transconductance
g
FS
80
VSD
⎯
mS
V
DS
= 10V,
I
D
=
0.115
Diode Forward Voltage
V
SD
⎯
0.8 1.2 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
23
⎯
pF
V
DS
= 25V,
V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
3.4
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
1.4
⎯
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
⎯
10
⎯
ns
V
DD
= 30V, I
D
= 0.115A,
R
L
= 150Ω,
V
GEN
= 10V
,
R
GEN
= 25Ω
Turn-Off Delay Time
t
D(OFF)
⎯
33
⎯
ns
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
DMN66D0LDW
Document number: DS31232 Rev. 6 - 2
3 of 5
www.diodes.com
February 2014
© Diodes Incorporated
DMN66D0LDW
NEW PRODUCT
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.01
0.1
1
12345
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 5V
Pulsed
DS
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
1
2
3
4
5
6
7
8
9
0 0.1 0.2 0.3 0.4 0.5 0.6
V = 5V
GS
V = 10V
GS
0
0.5
1.0
1.5
2.0
2.5
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V , GATE THRESHOLD VOLTAGE (V)
GS(TH)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
1.0
I = 250µA
D
Fig. 6 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
1
10
100
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
P1-P3P4-P5

DMN66D0LDW-7

Mfr. #:
Buy DMN66D0LDW-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 250mW 60Vdss
Lifecycle:
New from this manufacturer.
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