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NVATS4A102PZT4G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2017 1 Publication Order Number :
March 2017 - Rev. 0 NVATS4A102PZ/D
www.onsemi.com
NVATS4A102PZ
Power MOSFET
30 V, 18.5 mΩ, 44 A, P-Channel
The NVATS4A102PZ is a power MOSFET designed for compact size and
high efficiency which can achieve high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter Symbol Value Unit
Drain to Source Voltage
V
DSS
30 V
Gate to Source Voltage
V
GSS
20 V
Drain Current (DC)
I
D
44 A
Drain Current (Pulse)
PW 10 s, duty cycle 1%
I
DP
132 A
Power Dissipation
Tc = 25C
P
D
48 W
Operating Junction and
Storage Temperature
Tj, Tstg 55 to +175 C
Avalanche Energy (Single Pulse) (Note 2)
E
AS
58 mJ
Avalanche Current (Note 3)
I
AV
20 A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : V
DD
= 10 V, L = 200 H, I
AV
= 20 A
3 : L ≤ 200 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction to Case Steady State (Tc = 25C) R
JC
3.1
C/W
Junction to Ambient (Note 4) R
JA
80.4
C/W
Note 4 : Surface mounted on FR4 board using a 130 mm
2
, 1 oz. Cu pad.
ELECTRICAL CONNECTION
P-Channel
V
DSS
R
DS
(on) Max I
D Max
30 V
18.5 mΩ @ 10 V
44 A
31 mΩ @ 4.5 V
ATP102
LOT No.
1
2
3
4
ATPA
K
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
MARKING
1
3
2,4
1 : Gate
2 : Drain
3 : Source
4 : Drain
NVATS4A102PZ
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS at Ta 25C (Note 5)
Parameter Symbol Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage
V(
BR
)
DSS
I
D
= 1 mA, V
GS
= 0 V
30
V
Zero-Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1 A
Gate to Source Leakage Current
I
GSS
V
GS
= 16 V, V
DS
= 0 V
10 A
Gate Threshold Voltage
V
GS
(th)
V
D S
= 10 V, I
D
= 1 mA
1.2
2.6
V
Forward Transconductance
g
FS
V
DS
= 10 V, I
D
= 20 A
29 S
Static Drain to Source On-State
Resistance
R
DS
(on)1
I
D
= 20 A, V
GS
= 10 V
14 18.5 mΩ
R
DS
(on)2
I
D
= 10 A, V
GS
= 4.5 V
22 31 mΩ
Input Capacitance Ciss
V
DS
= 10 V, f = 1 MHz
1,490 pF
Output Capacitance Coss 360 pF
Reverse Transfer Capacitance Crss 270 pF
Turn-ON Delay Time
t
d
(on)
See Fig.1
11 ns
Rise Time
t
r
135 ns
Turn-OFF Delay Time
t
d
(off)
135 ns
Fall Time
t
f
185 ns
Total Gate Charge Qg
V
DS
= 15 V, V
GS
= 10 V, I
D
= 40 A
34 nC
Gate to Source Charge Qgs 4.2 nC
Gate to Drain “Miller” Charge Qgd 11.5 nC
Forward Diode Voltage
V
SD
I
S
= 40 A, V
GS
= 0 V
0.99 1.5
V
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Switching Time Test Circuit
PW = 10 μs
D.C. ≤ 1%
P. G
50 Ω
G
S
D
I
D
= --20 A
R
L
= 0.75 Ω
V
DD
= --15 V
V
OUT
V
IN
0 V
--10 V
V
IN
NVATS4A102PZ
NVATS4A102PZ
www.onsemi.com
3
g
FS
-- I
D
R
DS
(on) -- V
GS
R
DS
(on)
-- Tc
I
D
-- V
DS
I
D
-- V
GS
I
S
-- V
SD
SW Time -- I
D
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I
D
-- A
Gate-to-Source Voltage, V
GS
-- V
Drain Current, I
D
-- A
Gate-to-Source Voltage, V
GS
-- V
Case Temperature, Tc --
°C
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Drain Current, I
D
-- A
Drain Current, I
D
-- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, V
DS
-- V
Ciss, Coss, Crss -- pF
Forward Diode Voltage, V
SD
-- V
Source Current, I
S
-- A
Forward Transconductance,
g
FS
-- S
Ciss, Coss, Crss -- V
DS
--50 --25 175
0 --30--10 --15 --20 --25-- 5
1000
100
2
2
--0.1 --1.0
23 57
3
--1.2--1.0 --1.1--0.6--0.5--0.4 --0.8 --0.9--0.7--0.3
--0.001
--0.01
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
--0.1
--1.0
--10
--100
5
7
7
2
10
1.0
5
7
3
2
2
--10
357
--100
5723
--0.1 --1.0
23 57 2
--10
357
--100
5723
0 25 50 75 100 125 150
3
5
3
5
7
7
75
°
C
25
°
C
Tc= --25
°
C
--25
°
C
Tc=75
°
C
Single pulse
Tc= --25
°
C
25
°
C
75
°
C
Tc=75
°
C
25
°
C
--25
°
C
Ciss
Crss
10
100
2
3
5
5
7
7
7
2
3
t
d
(off)
V
DD
= --15V
V
GS
= --10V
f=1MHz
t
r
--0.6--0.4--0.2 --0.8 --1.0 --1.2 --2.0--1.4 --1.6 --1.80
0
-- 5
--10
--40
--35
--25
--30
--15
--20
0
-- 5
--10
--50
--35
--40
--30
--25
--45
--20
--15
0
-- 2-- 1 -- 4-- 3 -- 6-- 5 -- 8 -- 9--7 --10 --11 --16--12 --14 --15--13
0
50
30
20
10
5
10
50
40
35
25
20
15
30
45
--0.5 --1.5 --2.0--1.0 --2.5 --4.5--4.0 --5.0--3.5--3.00
--4.0V
V
GS
= --3.5V
--16.0V
V
DS
= --10V
Single pulse
t
f
25
°
C
V
GS
= --4.5V, I
D
= --10A
V
GS
= --10V, I
D
= --20A
--8.0V
Coss
t
d
(on)
--4.5V
--6.0V
--10.0V
I
D
= --10A
--20A
V
DS
= --10V
Single pulse
Tc=25°C
Single pulse
V
GS
=0V
Single pulse
Tc=25°C
Single pulse
40
45
35
25
15
5
P1-P3P4-P6

NVATS4A102PZT4G

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Manufacturer:
ON Semiconductor
Description:
MOSFET Power MOSFET P-Channel -30 V
Lifecycle:
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