74AHC_AHCT1G04 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 9 — 10 March 2015 6 of 14
NXP Semiconductors
74AHC1G04; 74AHCT1G04
Inverter
11. Dynamic characteristics
[1] t
pd
is the same as t
PLH
and t
PHL
.
[2] Typical values are measured at V
CC
= 3.3 V.
[3] Typical values are measured at V
CC
= 5.0 V.
[4] C
PD
is used to determine the dynamic power dissipation P
D
(W).
P
D
=C
PD
V
CC
2
f
i
+ (C
L
V
CC
2
f
o
)where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts;
N = total load switching outputs;
(C
L
V
CC
2
f
o
) = sum of outputs.
Table 8. Dynamic characteristics
GND = 0 V; t
r
= t
f
=
3.0 ns. For test circuit see Figure 7.
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74AHC1G04
t
pd
propagation
delay
A to Y; see Figure 6
[1]
V
CC
= 3.0 V to 3.6 V
[2]
C
L
= 15 pF - 4.3 7.1 1.0 8.5 1.0 11.0 ns
C
L
= 50 pF - 6.1 10.6 1.0 12 1.0 14.5 ns
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 3.1 5.5 1.0 6.5 1.0 7.0 ns
C
L
= 50 pF - 4.5 7.5 1.0 8.5 1.0 9.5 ns
C
PD
power
dissipation
capacitance
per buffer;
C
L
=50pF;f= 1 MHz;
V
I
=GNDtoV
CC
[4]
-15- - - - - pF
74AHCT1G04
t
pd
propagation
delay
A to Y; see Figure 6
[1]
V
CC
= 4.5 V to 5.5 V
[3]
C
L
= 15 pF - 3.4 6.7 1.0 7.5 1.0 8.5 ns
C
L
= 50 pF - 4.9 7.7 1.0 8.5 1.0 10.0 ns
C
PD
power
dissipation
capacitance
per buffer;
C
L
=50pF;f= 1 MHz;
V
I
=GNDtoV
CC
[4]
-16- - - - - pF
