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MIXA30W1200TED
P1-P3
P4-P6
© 2010 IXYS All rights reser
ved
4 - 6
20100622b
MIXA30W1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Part number
M
= Module
I
= IGBT
X
= XPT
A
= Standard
30
= Current Rating [A]
W
= Six-P
ack
1200
= Rev
erse V
oltage [V]
T
= NTC
ED
= E2-P
ack
Ordering
Part Name
Marking on Product
Delivering Mode
Base Qty
Ordering Code
Standard
MIXA30W1200
TED
MIXA30W1200TED
Box
6
508635
Circuit Dia
gram
Outline Drawing
Dimensions in mm (1 mm = 0.0394“)
X
0
baseplate typ. 100 µm con
vex
over 75 mm befor
e mounting
20.5
±
0.1
17
±
0.5
7
-0.5
Ø 2.1; l=6
0.2
±
0.2
±
±
0.1
±
0.2
±
0.3
Y
B
Ø 2.5
Ø 2.1
Detail Z
+
0.3
Ø 6
6
1.5
Z
Detail X
0.05
±
0.02
±
0.8
1.2
Detail
Y
0.05
±
±
1°
15°
0.8
45
38.4
32
11
Ø5.5
72.7
75.7
82.3
93
107.5
3.5
-0.5
42.69
38.88
54.12
50.31
61.74
65.55
76.98
73.17
19.83
16.02
31.26
27.45
0
20.95
11.43
7.62
7.62
11.43
20.95
76.98
61.74
2
1
6
5
3
4
8
7
9
10
12
11
86.1
73.17
57.93
38.88
42.69
23.64
19.83
24
21
22
23
19
20
17
18
n
0.4
j
A
B
A
15
14
13
27
28
16
25
26
23, 24
21, 22
19, 20
9
10
11
12
5
6
7
8
1
2
3
4
25, 26
27, 28
NTC
17
18
15, 16
13, 14
Product Marking
© 2010 IXYS All rights reser
ved
5 - 6
20100622b
MIXA30W1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
In
ver
ter
T1 -
T6
0
1
2
3
0
10
20
30
40
50
0
10
20
30
40
50
0
1
2
3
4
5
6
0
1
2
3
4
5
0
10
20
30
40
50
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5
6
7
8
9
10
11
12
13
0
10
20
30
40
50
0
20
40
60
80
100
0
5
10
15
20
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
13 V
20
40
60
80
100
12
0
140
160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
[mJ]
E
off
T
VJ
= 125°C
Fig. 1 Typ. output characteristi
cs
V
GE
= 15 V
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteri
stics
I
C
[A]
Fig. 3 Typ. tranfer characteristi
cs
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. sw
itching energy vs. collecto
r current
E
on
Fig. 6 Typ. sw
itching energy
vs. gate resistance
R
G
[
Ω
]
E
[mJ]
I
C
[A]
E
on
E
off
I
C
= 25 A
V
CE
= 600 V
R
G
= 39
Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 25 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
© 2010 IXYS All rights reser
ved
6 - 6
20100622b
MIXA30W1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
0
1
2
3
0
10
20
30
40
50
60
0
25
50
75
100
125
15
0
100
1000
10000
100000
V
F
[V]
I
C
[A]
T
VJ
= 25°C
Fig. 7 Typ. forw
ard characteristi
c
Fig. 9 Typ. NTC resistance vers
us temperature
R
[
Ω
]
T
C
[°C]
T
VJ
= 125°C
0.001
0.01
0.1
1
10
0.01
0.1
1
10
t
p
[s]
Z
thJC
[K/W]
Fig. 10 Typ. transien
t thermal impedan
ce
Diode
IGBT
300
400
500
600
700
800
90
0
1000
1100
0.0
0.4
0.8
1.2
1.6
2.0
Fig. 8 Typ. recovery e
nergy E
rec
versus di/dt
T
VJ
= 125°C
V
R
= 600 V
15 A
30 A
60 A
E
rec
[mJ]
di
F
/dt
[A/µs]
NTC
IGBT
FRD
R
i
t
i
R
i
t
i
1
0.18
0.0025
0.3413
0.0025
2
0.14
0.03
0.2171
0.03
3
0.36
0.03
0.3475
0.03
4
0.16
0.08
0.2941
0.08
In
ver
ter D1 - D6
P1-P3
P4-P6
MIXA30W1200TED
Mfr. #:
Buy MIXA30W1200TED
Manufacturer:
Littelfuse
Description:
IGBT Modules Six-Pack XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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