2003 May 13 3
NXP Semiconductors Product data sheet
High voltage double diode BAW101S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm
2
.
ELECTRICAL CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
R
continuous reverse voltage − 300 V
series connection − 600 V
V
RRM
repetitive peak reverse voltage − 300 V
series connection − 600 V
I
F
continuous forward current single diode loaded; note 1; see Fig.2 − 250 mA
double diode loaded; note 1; see Fig.2 − 140 mA
I
FRM
repetitive peak forward current − 625 mA
I
FSM
non-repetitive peak forward
current
square wave; T
j
= 25 °C prior to surge;
t
= 1 µs
− 4.5 A
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 350 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
V
BR(R)
reverse breakdown voltage I
R
= 100 µA 300 − V
V
F
forward voltage I
F
= 100 mA; note 1 − 1.1 V
I
R
reverse current V
R
= 250 V − 150 nA
V
R
= 250 V; T
amb
= 150 °C − 50 µA
t
rr
reverse recovery time when switched from I
F
= 30 mA to I
R
= 30 mA;
R
L
= 100 Ω; measured at I
R
= 3 mA
− 50 ns
C
d
diode capacitance V
R
= 0 V; f = 1 MHz − 2 pF
