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PBSS5540Z/ZLX

P1-P3P4-P6P7-P9P10-P10
2001 Sep 21 3
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5540Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −40 V
V
CEO
collector-emitter voltage open base − −40 V
V
EBO
emitter-base voltage open collector − −6 V
I
C
collector current (DC) − −5 A
I
CM
peak collector current − −10 A
I
BM
peak base current − −2 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 1.35 W
T
amb
≤ 25 °C; note 2 − 2 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 92 K/W
2001 Sep 21 4
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5540Z
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 − − −100 nA
V
CB
= −30 V; I
E
= 0; T
j
= 150 °C − − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −500 mA 250 350 −
V
CE
= −2 V; I
C
= −1 A; note 1 200 300 −
V
CE
= −2 V; I
C
= −2 A; note 1 150 250 −
V
CE
= −2 V; I
C
= −5 A; note 1 50 150 −
V
CEsat
collector-emitter saturation voltage I
C
= −500 mA; I
B
= −5 mA − −80 −120 mV
I
C
= −1 A; I
B
= −10 mA − −120 −170 mV
I
C
= −2 A; I
B
= −200 mA − −110 −160 mV
R
CEsat
equivalent on-resistance I
C
= −2 A; I
B
= −200 mA; note 1 − <55 <80 mΩ
V
CEsat
collector-emitter saturation voltage I
C
= −5 A; I
B
= −500 mA − −250 −375 mV
V
BEsat
base-emitter saturation voltage I
C
= −5 A; I
B
= −500 mA − − −1.3 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −2 A − −0.8 −1.25 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −10 V;
f
= 100 MHz
60 120 − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0;
f
= 1 MHz
− 90 105 pF
2001 Sep 21 5
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5540Z
handbook, halfpage
0
1000
200
400
600
800
MGU391
−1
h
FE
I
C
(mA)
−10 −10
2
−10
3
−10
4
(1)
(2)
(3)
Fig.2 DC current gain as a function of collector
current; typical values.
V
CE
= −2 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
−1.2
−0.4
−0.8
MGU393
−10
−1
−1 −10 −10
2
−10
3
−10
4
I
C
(mA)
V
BE
(V)
(1)
(2)
(3)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
V
CE
= −2 V.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
−10
3
−10
2
−10
−1
−10
−1
MGU395
−1 −10
I
C
(mA)
V
CEsat
(mV)
−10
2
−10
3
−10
4
(1)
(3)
(2)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
handbook, halfpage
0
−1.2
−0.4
−0.8
MGU394
−10
−1
−1 −10 −10
2
−10
3
−10
4
I
C
(mA)
V
BEsat
(V)
(1)
(2)
(3)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.
P1-P3P4-P6P7-P9P10-P10

PBSS5540Z/ZLX

Mfr. #:
Buy PBSS5540Z/ZLX
Manufacturer:
Nexperia
Description:
TRANS PNP 40V 5A SOT223
Lifecycle:
New from this manufacturer.
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