1SS404,H3F

1SS404
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS404
High Speed Switching Applications
Two-pin small packages are suitable for higher mounting densities
Low forward voltage : V
F
(3)
= 0.38 V (typ.)
Low reverse current: I
R
= 50 μA (max)
Small total capacitance: C
T
= 46 pF (typ.)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
25 V
Reverse voltage V
R
20 V
Maximum (peak) forward current I
FM
700 mA
Average forward current I
O
300 mA
Power dissipation P 200 (Note 1)
mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
55 to 125 °C
Operating temperature range T
opr
40 to 100 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy board of 20 mm × 20 mm,
pad dimension 4 mm × 4 mm.
Marking Equivalent Circuit (top view)
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
V
F (1)
I
F
= 1 mA 0.16
V
F (2)
I
F
= 10 mA 0.22
Forward voltage
V
F (3)
I
F
= 300 mA 0.38 0.45
V
Reverse current I
R
V
R
= 20 V 50 μA
Total capacitance C
T
V
R
= 0, f = 1 MHz 46 pF
Unit: mm
USC
JEDEC
JEITA
TOSHIBA 1-1E1A
Weight: 0.004 g (typ.)
S 5
Start of commercial production
1999-06
1SS404
2014-03-01
2
Forward voltage V
F
(V)
I
F
– V
F
Forward current I
F
(A)
Reverse current I
R
(A)
Reverse voltage V
R
(V)
I
R
– V
R
Ambient temperature Ta (°C)
P – T
a
Power Dissipation P (mW)
Reverse voltage V
R
(V)
C
T
– V
R
Total capacitance C
T
(pF)
0 0.1 0.5 0.4 0.3 0.2
10 μ
10 m
1 m
100 m
100 μ
Ta = 100°C
75°C
50°C
25°C
25°C
0°C
0
1 μ
12 24 16 8 4
10 n
20
100 n
10 μ
1 m
10 m
100 μ
Ta = 100°C
75°C
50°C
25°C
25°C
0°C
0.01 1 10030 10
300
1
0.03 0.3
3
10
100
1000
30
0.1 3
f = 1 MHz
Ta = 25°C
140
0
40
75 150100 50 25
0
125
100
80
60
20
120
Mounted on a glass epoxy
circuit board of 20 x 20mm,
pad dimension 4 x 4mm.
1SS404
2014-03-01
3
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
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MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
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WH
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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

1SS404,H3F

Mfr. #:
Manufacturer:
Toshiba
Description:
Schottky Diodes & Rectifiers Sml-Signal Schottky Barrier Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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