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VS-UFB170FA60

P1-P3P4-P6P7-P8
VS-UFB170FA60
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
1
Document Number: 94814
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Ultrafast Rectifier Module, 170 A
FEATURES
• Two fully independent diodes
• Fully insulated package
• Ultrafast, soft reverse recovery, with high
operation junction temperature (T
J
max. = 175 °C)
• Very low forward voltage drop
• Optimized for power conversion: welding and industrial
SMPS applications
• Easy to use and parallel
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
The VS-UFB170FA60 insulated modules integrate two state
of the art ultrafast recovery rectifiers in the compact,
industry standard SOT-227 package. The diodes structure,
and its life time control, provide an ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
PRIMARY CHARACTERISTICS
V
R
600 V
I
F(AV)
per module at T
C
= 76 °C 170 A
t
rr
60 ns
Type Modules - Diode FRED Pt
®
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
600 V
Continuous forward current per diode I
F
T
C
= 90 °C 94
A
Single pulse forward current per diode I
FSM
T
C
= 25 °C 850
Maximum power dissipation per module P
D
T
C
= 90 °C 233 W
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500 V
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
VS-UFB170FA60
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
2
Document Number: 94814
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
BR
I
R
= 100 μA 600 - -
V
Forward voltage, per leg V
FM
I
F
= 50 A - 1.02 1.19
I
F
= 50 A, T
J
= 175 °C - 0.87 -
I
F
= 100 A - 1.17 1.43
I
F
= 100 A, T
J
= 175 °C - 1.03 -
Reverse leakage current, per leg I
RM
V
R
= V
R
rated - 0.5 50 μA
T
J
= 175 °C, V
R
= V
R
rated - 0.1 2 mA
Junction capacitance, per leg C
T
V
R
= 600 V - 43 - pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time, per leg t
rr
T
J
= 25 °C, I
F
= 1 A dI
F
/dt = 200 A/μs V
R
= 30
V
-60 -
ns
T
J
= 25 °C
I
F
= 25 A
dI
F
/dt = 500 A/μs
V
R
= 200 V
- 170 -
T
J
= 125 °C - 270 -
Peak recovery current, per leg I
RRM
T
J
= 25 °C - 40 -
A
T
J
= 125 °C - 54 -
Reverse recovery charge, per leg Q
rr
T
J
= 25 °C - 3.4 -
μC
T
J
= 125 °C - 6.8 -
Reverse recovery time, per leg t
rr
T
J
= 25 °C
I
F
= 50 A
dI
F
/dt = 500 A/μs
V
R
= 200 V
- 220 -
ns
T
J
= 125 °C - 300 -
Peak recovery current, per leg I
RRM
T
J
= 25 °C - 47 -
A
T
J
= 125 °C - 61 -
Reverse recovery charge, per leg Q
rr
T
J
= 25 °C - 5.2 -
μC
T
J
= 125 °C - 9.1 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
R
thJC
- - 0.73
°C/WJunction to case, both leg conducting - - 0.365
Case to heatsink R
thCS
Flat, greased surface - 0.10 -
Weight -30 - g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
VS-UFB170FA60
www.vishay.com
Vishay Semiconductors
Revision: 26-Sep-17
3
Document Number: 94814
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
10
T
J
= 125 °C
0
V
F
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
1000
0.5 1.0 1.5 2.0 2.5
T
J
= 175 °C
T
J
= 25 °C
0.01
0.1
1
10
100
0 200 300
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
400 500 600100
0.001
0.0001
1000
T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
1000
10
100 1000
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
100
0.01
0.1
0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
Single pulse
(thermal resistance)
DC
10
P1-P3P4-P6P7-P8

VS-UFB170FA60

Mfr. #:
Buy VS-UFB170FA60
Manufacturer:
Vishay / Siliconix
Description:
Rectifiers Output & SW Modules - SOT-227 FRED
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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