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S3BHE3/9AT

P1-P3P4-P4
S3A, S3B, S3D, S3G, S3J, S3K, S3M
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-16
1
Document Number: 88713
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
I
FSM
100 A
I
R
10 μA
V
F
1.15 V
T
J
max. 150 °C
Package DO-214AB (SMC)
Diode variations Single die
DO-214AB (SMC)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL S3A S3B S3D S3G S3J S3K S3M UNIT
Device marking code SA SB SD SG SJ SK SM
Maximum recurrent peak reverse voltage V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS voltage V
RMS
35 70 140 280 420 560 700 V
Maximum DC blocking voltage V
DC
50 100 200 400 600 800 1000 V
Maximum average forward rectified current at T
L
= 103 °C I
F(AV)
3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
100 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
S3A, S3B, S3D, S3G, S3J, S3K, S3M
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-16
2
Document Number: 88713
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad area
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL S3A S3B S3D S3G S3J S3K S3M UNIT
Maximum instantaneous forward voltage 2.5 A V
F
1.15 V
Maximum DC reverse current at rated
DC blocking voltage
T
A
= 25 °C
I
R
10
μA
T
A
= 125 °C 250
Typical reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
2.5 μs
Typical junction capacitance 4.0 V, 1 MHz C
J
60 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL S3A S3B S3D S3G S3J S3K S3M UNIT
Typical thermal resistance
(1)
R
JA
47
°C/W
R
JL
13
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
S3J-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
S3J-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
S3JHE3_A/H (1) 0.211 H 850 7" diameter plastic tape and reel
S3JHE3_A/I
(1)
0.211 I 3500 13" diameter plastic tape and reel
150
0
50
70
90
110
130
170
0.5
1.0
1.5
2.0
2.5
3.5
3.0
Resistive or Inductive Load
P.C.B. Mounted on
0.3" x 0.3" (8.0 mm x 8.0 mm)
Copper Pad Areas
Average Forward Current (A)
Lead Temperature (°C)
1
100
10
100
10
1000
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
L
= 75 °C
8.3 ms Single Half Sine-Wave
S3A, S3B, S3D, S3G, S3J, S3K, S3M
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-16
3
Document Number: 88713
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.6
0.7
10
100
0.8
0.9
1.1
1.2
1.3
0.01
0.1
1
1.0
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0
20
40
60
80
100
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
10
100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01
0.1
1
10
100
0.1
1
10
100
Mounted on 0.20" x 0.27" (5 mm x 7 mm)
Copper Pad Areas
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
P1-P3P4-P4

S3BHE3/9AT

Mfr. #:
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Manufacturer:
Vishay
Description:
DIODE GEN PURP 100V 3A DO214AB
Lifecycle:
New from this manufacturer.
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