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APT2X101D20J

P1-P3P4-P4
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifi ers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
053-2005 Rev D 5-2011
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
C
= 120°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Operating and StorageTemperature Range
Symbol
V
R
V
RRM
V
RWM
I
F
(AV)
I
F
(RMS)
I
FSM
T
J
,T
STG
UNIT
Volts
Amps
°C
APT2X101_100D20J
200
100
171
1000
-55 to 175
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
DUAL DIE ISOTOP
®
PACKAGE
APT2X100D20J APT2X101D20J
APT2X101D20J 200V 100A
APT2X100D20J 200V 100A
Symbol
V
F
I
RM
C
T
UNIT
Volts
μA
pF
MIN TYP MAX
1.0 1.1
1.4
0.9
500
1000
400
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
I
F
= 100A
I
F
= 200A
I
F
= 100A, T
J
= 125°C
V
R
= V
R
Rated
V
R
= V
R
Rated, T
J
= 125°C
Microsemi Website - http://www.microsemi.com
Anti-Paralle l P aralle l
2
1
323
414
S
O
T
-2
2
7
IS OT OP
®
1
2
3
4
file # E145592
"UL Recognized"
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
10
-5
10
-4
10
-3
10
-2
0.1 1
053-2005 Rev D 5-2011
DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi Reserves the right to change, without notice, the specifi cations and information contained herein.
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Package Weight
Maximum Terminal & Mounting Torque
Symbol
R
θJC
R
θJA
W
T
Torque
MIN TYP MAX
.42
20
1.03
29.2
10
1.1
UNIT
°C/W
oz
g
lb•in
N•m
MIN TYP MAX
-
39
- 60
- 200
- 6 -
- 110
- 840
- 15 -
- 80
- 1910
- 44
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 100A, di
F
/dt = -200A/μs
V
R
= 133V, T
C
= 25°C
I
F
= 100A, di
F
/dt = -200A/μs
V
R
= 133V, T
C
= 125°C
I
F
= 100A, di
F
/dt = -1000A/μs
V
R
= 133V, T
C
= 125°C
I
F
= 1A, di
F
/dt = -100A/μs, V
R
= 30V, T
J
= 25°C
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
APT2X101_100D20J
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
053-2005 Rev D 5-2011
APT2X101_100D20J
TYPICAL PERFORMANCE CURVES
T
J
=125°C
V
R
=133V
50A
100A
130A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC) (A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 150°C
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/μs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/μs) -di
F
/dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
Duty cycle = 0.5
T
J
=150°C
T
J
=125°C
V
R
=133V
200
180
160
140
120
100
80
60
40
20
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 800A/μs)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
130A
100A
50A
300
250
200
150
100
50
0
2000
1500
1000
500
0
0 0.5 1 1.5 2 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
100A
50A
130A
T
J
=125°C
V
R
=133V
120
100
80
60
40
20
0
50
40
30
20
10
0
1.2
1.0
0.8
0.6
0.4
0.2
0
4000
3500
3000
2500
2000
1500
1000
500
0
0 25 50 75 100 125 150 25 50 75 100 125 150
.3 1 10 100 200
P1-P3P4-P4

APT2X101D20J

Mfr. #:
Buy APT2X101D20J
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Fast Recovery Epitaxial Diode - D
Lifecycle:
New from this manufacturer.
Delivery:
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