IRF7463TRPBF Datasheet IRF7463TRPBF, IRF7463PBF | P1-P3

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IRF7463PbF

SMPS MOSFET

HEXFET

®

Power MOSFET

V

DSS

R

DS(on)

max I

D

30V 8mΩ 14A

Notes  through  are on page 8

Symbol Parameter Typ. Max. Units

R

θJL

Junction-to-Drain Lead  ––– 20

R

θJA

Junction-to-Ambient  ––– 50 °C/W

Thermal Resistance

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

Drain-Source Voltage 30 V

V

GS

Gate-to-Source Voltage ± 12 V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 10V 14

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 10V 11 A

I

DM

Pulsed Drain Current 110

P

D

@T

A

= 25°C Maximum Power Dissipation 2.5 W

P

D

@T

A

= 70°C Maximum Power Dissipation 1.6 W

Linear Derating Factor 0.02 mW/°C

T

J

, T

STG

Junction and Storage Temperature Range -55 to + 150 °C

Benefits

l Ultra-Low Gate Impedance

l Very Low R

DS(on)

at 4.5V V

GS

l Fully Characterized Avalanche Voltage

and Current

SO-8

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

A

10/12/04

l High Frequency DC-DC Isolated

Converters with Synchronous Rectification

for Telecom and Industrial use

Applications

PD - 95248

l High Frequency Buck Converters for

Computer Processor Power

l Lead-Free

IRF7463PbF

2 www.irf.com

Dynamic @ T

J

= 25°C (unless otherwise specified)

ns

Symbol Parameter Typ. Max. Units

E

AS

Single Pulse Avalanche Energy ––– 320 mJ

I

AR

Avalanche Current ––– 14 A

Avalanche Characteristics

S

D

G

Diode Characteristics

2.3

110

A

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Forward Transconductance 41 ––– ––– S V

DS

= 24V, I

D

= 11A

Q

g

Total Gate Charge ––– 34 51 I

D

= 11A

Q

gs

Gate-to-Source Charge ––– 7.6 11.4 nC V

DS

= 15V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 12 18 V

GS

= 4.5V 

Q

oss

Output Gate Charge ––– 21 32 V

GS

= 0V, V

DS

= 15V

t

d(on)

Turn-On Delay Time ––– 16 ––– V

DD

= 15V

t

r

Rise Time ––– 138 ––– I

D

= 11A

t

d(off)

Turn-Off Delay Time ––– 28 ––– R

G

= 1.8Ω

t

f

Fall Time ––– 6.5 ––– V

GS

= 4.5V 

C

iss

Input Capacitance ––– 3150 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 1070 ––– V

DS

= 15V

C

rss

Reverse Transfer Capacitance ––– 180 ––– pF ƒ = 1.0MHz

V

SD

Diode Forward Voltage

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

––– 0.52 1.3 V T

J

= 25°C, I

S

= 11A, V

GS

= 0V 

––– 0.44 ––– T

J

= 125°C, I

S

= 11A, V

GS

= 0V 

t

rr

Reverse Recovery Time ––– 45 70 ns T

J

= 25°C, I

F

= 11A, V

R

=15V

Q

rr

Reverse Recovery Charge ––– 65 100 nC di/dt = 100A/µs



t

rr

Reverse Recovery Time ––– 50 75 ns T

J

= 125°C, I

F

= 11A, V

R

=15V

Q

rr

Reverse Recovery Charge ––– 80 120 nC di/dt = 100A/µs



Static @ T

J

= 25°C (unless otherwise specified)

I

GSS

I

DSS

Drain-to-Source Leakage Current

R

DS(on)

Static Drain-to-Source On-Resistance

mΩ

Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 30 ––– ––– V V

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

––– 0.029 ––– V/°C Reference to 25°C, I

D

= 1mA

––– 6.0 8.0 V

GS

= 10V, I

D

= 14A 

––– 7.0 9.5 V

GS

= 4.5V, I

D

= 11A 

––– 10.5 20 V

GS

= 2.7V, I

D

= 7.0A 

V

GS(th)

Gate Threshold Voltage 0.6 ––– 2.0 V V

DS

= V

GS

, I

D

= 250µA

––– ––– 20

µA

V

DS

= 24V, V

GS

= 0V

––– ––– 100 V

DS

= 24V, V

GS

= 0V, T

J

= 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V

GS

= 12V

Gate-to-Source Reverse Leakage ––– ––– -200

nA

V

GS

= -12V

IRF7463PbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

0.01

0.1

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.5V

3.0V

2.7V

2.5V

2.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.0V

1

10

100

1000

0.1 1 10 100

20µs PULSE WIDTH

T = 150 C

J

°

TOP

BOTTOM

VGS

15V

10V

4.5V

3.5V

3.0V

2.7V

2.5V

2.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

2.0V

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

J

DS(on)

°

V =

I =

GS

D

10V

14A

Fig 4. Normalized On-Resistance

Vs. Temperature

2.0 2.5 3.0 3.5 4.0 4.5

V

GS

, Gate-to-Source Voltage (V)

0.10

1.00

10.00

100.00

1000.00

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 15V

20µs PULSE WIDTH

IRF7463TRPBF

IRF7463TRPBF

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