MMBT3906L RFG Datasheet MMBT3906L RFG | P1-P3

- Epitaxial planar die construction

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with Nickel (Ni) underplate

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

- Case: SOT- 23, molded plastic

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260

o

C/10s

- Weight: 8 mg (approximately)

- Marking Code: 3E

.

SYMBOL UNIT

P

D

mW

V

CBO

V

CEO

V

EBO

V

I

C

mA

R

θJA

o

C/W

T

J

, T

STG

o

C

Notes:1. Valid provided that electrodes are kept at ambient temperature

SYMBOL

UNIT

I

C

= 10 μAV

(BR)CBO

V

I

C

= -1 mA V

(BR)CEO

V

I

E

= -10 μAV

(BR)EBO

V

CB

= -40 V I

CBO

nA

V

EB

= -6 V I

EBO

nA

V

CE

= -1 V

V

CE

= -1 V

V

CE

= -1 V

V

CE

= -1 V

V

CE

= -1 V

I

C

= -10 mA

I

C

= -50 mA

I

C

= -10 mA

I

C

= -50 mA

Gain-Bandwidth Product

V

CE

= -20 V I

C

= -10 mA f

T

MHz

Output Capacitance

V

CB

= -5 V I

E

= 0 C

obo

pF

Delay time

V

CC

= -3 V V

BE

= -0.5 V t

d

ns

Rise time

t

r

ns

Storage time

V

CC

= -3 V t

s

ns

Fall time

t

f

ns

Document Number: DS_S1502001 Version: A15

MMBT3906L

Taiwan Semiconductor

Small Signal Product

350mW, PNP Small Signal Transistor

FEATURES

MECHANICAL DATA

SOT-23

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T

A

=25℃ unless otherwise noted)

PARAMETER VALUE

Collector Base Cut-off Current

Emitter Base Cut-off Current

-

80

100

-5

- -0.25

--0.4

30

300

Thermal Resistance Junction-Ambient

Collector Current

Emitter-Base Voltage

Collector-Emitter Voltage

-55 to + 150

357

Junction and Storage Temperature Range

Collector-Base Voltage

Power Dissipation

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

-200

-5

-40

350

I

C

= -10 mA

I

B1

= -1.0 mA

V

CE(sat)

V

BE(sat)

V

I

B

= -1 mA

I

C

= -100 mA

250

I

B

= -1 mA

I

B

= -5 mA

PARAMETER

I

C

= 0

I

B

= 0

I

E

= 0

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

I

B1

= I

B2

= -1.0 mA

MAXMIN

-40

-40 -

I

C

= -10 mA

f= 1MHz

f= 100MHz

I

B

= -5 mA

-

I

C

= -50 mA

I

C

= -10 mA

I

C

= -1 mA

60

h

FE

I

C

= -0.1 mA

-

-4.5

-0.65

-100

--50

-0.85

- -0.95

225

75

-

35

Small Signal Product

(T

A

=25°C unless otherwise noted)

Document Number: DS_S1502001 Version: A15

MMBT3906L

Taiwan Semiconductor

RATINGS AND CHARACTERISTICS CURVES

1

10

0.1 1 10 100

Capacitance (pF)

Reverse Bias (V)

Fig. 1 Capacitance

Cobo

Cibo

10

100

1000

10000

1 10 100 1000

Q Charge (pC)

I

C

- Collector Current (mA)

V

CC

= 40 V

I

D

/I

B

= 10

QT

Fig. 2 Charge Data

QA

1

10

100

1000

1 10 100 1000

Time (ns)

I

C

- Collector Current (mA)

Fig. 3 Turn - On Time

I

C

/I

B

= 10

1r @ V

CC

= 3.0 V

1d @ V

OB

= 0 V

15 V

40 V

2.0 V

1

10

100

1000

1 10 100 1000

tf - Fall Time (ns)

I

C

- Collector Current (mA)

Fig. 4 Fall Time

V

CC

= 40 V

I

B1

= I

B2

I

C

/I

B

= 20

I

C

/I

B

= 10

0

1

2

3

4

5

0.1 1 10 100

N

F -

Noise Figure (dB)

f - Frequency (kHz)

Fig. 5 Noise Figure vs. Frequency

Source Resistance = 200 Ω

I

C

= 1.0 mA

Source Resistance = 2.0 KΩ

I

C

= 0.5 mA

Source Resistance = 2.0 KΩ

I

C

= 100 μA

Source Resistance = 2.0 KΩ

I

C

= 50μA

0

2

4

6

8

10

12

0.1 1 10 100

N

F

, Noise Figure (dB)

Rg, Source Resistance (kOhms)

Fig. 6 Noise Figure vs. Source Resistance

f = 1.0 kHz

I

C

= 1.0 mA

I

C

= 0.5 mA

I

C

= 50 μA

I

C

= 100 μA

MMBT3906L

Taiwan Semiconductor

Small Signal Product

Document Number: DS_S1502001 Version: A15

h Parameters ( V

CE

= -10 V

DC

, f = 1.0 kHz , T

A

= 25

o

C )

10

100

1000

0.1 1 10

I

C

, Collector Current (mA)

Fig. 7 Current Gain

h

FE

, DC Current Gain

0.1

1

10

100

0.1 1 10

hoe, Output Admittance (u mhos)

I

C

- Collector Current (mA)

Fig. 8 Output Admittance

0.1

1

10

100

0.1 1 10

I

C

- Collector Current (mA)

Fig. 9 Input Impedance

h

ie

, Input Impedance (kΩ)

0.1

1

10

0.1 1 10

I

C

- Collector Current (mA)

Fig. 10 Voltage Feedback Ratio

hre , Voltage Feedback Ratio (x10

-4

)

0

0.2

0.4

0.6

0.8

1

1 10 100 1000

V, Voltage

I

C

- Collector Current (mA)

Fig. 11 "ON" Voltages

V

CE

@ I

C

/I

B

= 10

-2

-1.5

-1

-0.5

0

0.5

1

0 20 40 60 80 100 120 140 160 180 200

I

C

- Collector Current (mA)

Fig. 12 Temperature Coefficients

Θ

VB

for V

BE9sat)

+25

o

C to +125

o

C

θy , Temperature(

o

C)

-55

o

C to +25

o

C

MMBT3906L RFG

MMBT3906L RFG

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