OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NCV7513FTR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23
NCV7513
http://onsemi.com
4
PIN FUNCTION DESCRIPTION
Symbol Description
FLTREF Analog Fault Detect Threshold: 5.0 V Compliant
DRN0 – DRN5 Analog Drain Feedback: Internally Clamped
GAT0 – GAT5 Analog Gate Drive: 5.0 V Compliant
ENA1, ENA2 Digital Master Enable Inputs: 3.3 V/5.0 V (TTL) Compatible
IN0 – IN5 Digital Parallel Input: 3.3 V/5.0 V (TTL) Compatible
CSB Digital Chip Select Input: 3.3 V/5.0 V (TTL) Compatible
SCLK Digital Shift Clock Input: 3.3 V/5.0 V (TTL) Compatible
SI Digital Serial Data Input: 3.3 V/5.0 V (TTL) Compatible
SO Digital Serial Data Output: 3.3 V/5.0 V Compliant
STAB Digital Open−Drain Output: 3.3 V/5.0 V Compliant
FLTB Digital Open−Drain Output: 3.3 V/5.0 V Compliant
VCC1 Power Supply − Low Power Path
GND Power Return − Low Power Path – Device Substrate
VCC2 Power Supply − Gate Drivers
VDD Power Supply − Serial Output Driver
VSS Power Return – VCC2, VDD, Drain Clamps
2 3 4 5 6 7 81
IN0
IN1
IN2
IN3
IN4
IN5
ENA2
ENA1
10
11
12
13
14
15
16
9
FLTB
CSB
SCLK
SI
SO
VDD
STAB
VSS
23 22 21 20 19 18 1724
DRN2
GAT2
DRN3
GAT3
DRN4
GAT4
DRN5
GAT5
31
30
29
28
27
26
25
32
GND
FLTREF
VCC1
VCC2
DRN0
GAT0
DRN1
GAT1
NCV7513
Figure 3. 32 Pin LQFP Pinout (Top View)
NCV7513
http://onsemi.com
5
MAXIMUM RATINGS (Voltages are with respect to device substrate.)
Rating Value Unit
DC Supply (V
CC1
, V
CC2
, V
DD
) −0.3 to 6.5 V
Difference Between V
CC1
and V
CC2
"0.3 V
Difference Between GND (Substrate) and V
SS
"0.3 V
Output Voltage (Any Output) −0.3 to 6.5 V
Drain Feedback Clamp Voltage (Note 1) −0.3 to 40 V
Drain Feedback Clamp Current (Note 1) 10 mA
Input Voltage (Any Input) −0.3 to 6.5 V
Junction Temperature, T
J
−40 to 150 °C
Storage Temperature, T
STG
−65 to 150 °C
Peak Reflow Soldering Temperature: Lead−Free
60 to 150 seconds at 217°C (Note 2)
260 peak °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ATTRIBUTES
Characteristic Value
ESD Capability
Human Body Model
Machine Model
w " 2.0 kV
w " 200 V
Moisture Sensitivity (Note 2) MSL3
Package Thermal Resistance (Note 3)
Junction–to–Ambient, R
q
JA
Junction–to–Pin, R
Y
JL
86.0 °C/W
58.5 °C/W
1. An external series resistor must be connected between the MOSFET drain and the feedback input in the application. Total clamp power
dissipation is limited by the maximum junction temperature, the application environment temperature, and the package thermal resistances.
2. For additional information, see or download ON Semiconductor’s Soldering and Mounting Techniques Reference Manual, SOLDERRM/D, and
Application Note AND8003/D.
3. Values represent still air steady−state thermal performance on a 4 layer (42 x 42 x 1.5 mm) PCB with 1 oz. copper on an FR4 substrate, using
a minimum width signal trace pattern (384 mm
2
trace area).
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC1
Main Power Supply Voltage 4.75 5.25 V
V
CC2
Gate Drivers Power Supply Voltage V
CC1
− 0.3 V
CC1
+ 0.3 V
V
DD
Serial Output Driver Power Supply Voltage 3.0 V
CC1
V
V
IN
High Logic High Input Voltage 2.0 V
CC1
V
V
IN
Low Logic Low Input Voltage 0 0.8 V
T
A
Ambient Still−Air Operating Temperature −40 125 °C
NCV7513
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS (4.75 VvV
CCX
v5.25 V, V
DD
= V
CCX
, −40°CvT
J
v125°C, unless otherwise specified.) (Note 4)
Characteristic Symbol Conditions Min Typ Max Unit
V
CC1
Supply
Operating Current –
V
CC1
= 5.25 V, V
FLTREF
= 1.0 V
ENA
X
= 0
ENA
1
= ENA
2
= V
CC1
,
V
DRNX
= 0 V, GAT
X
drivers off
ENA
1
= ENA
2
= V
CC1
,
GAT
X
drivers on
–
–
–
2.80
3.10
2.80
5.0
5.0
5.0
mA
Power−On Reset Threshold V
CC1
Rising 3.65 4.20 4.60 V
Power−On Reset Hysteresis − 0.150 0.385 – V
Digital I/O
V
IN
High ENA
X
, IN
X
, SI, SCLK, CSB 2.0 – – V
V
IN
Low ENA
X
, IN
X
, SI, SCLK, CSB – – 0.8 V
V
IN
Hysteresis ENA
X
, IN
X
, SI, SCLK, CSB 100 330 500 mV
Input Pullup Current CSB V
IN
= 0 V −25 −10 – mA
Input Pulldown Current ENA2, IN
X
, SI, SCLK,
V
IN
= V
CC1
– 10 25 mA
Input Pulldown Resistance ENA1 100 150 200 kW
SO Low Voltage V
DD
= 3.3 V, I
SINK
= 5.0 mA – 0.11 0.25 V
SO High Voltage V
DD
= 3.3 V, I
SOURCE
= 5.0 mA V
DD
−
0.25
V
DD
−
0.11
– V
SO Output Resistance Output High or Low – 22 – W
SO Tri−State Leakage Current CSB = 3.3 V −10 – 10 mA
STAB Low Voltage STAB Active, I
STAB
= 1.25 mA – 0.1 0.25 V
STAB Leakage Current V
STAB
= V
CC1
– – 10 mA
FLTB Low Voltage FLTB Active, I
FLTB
= 1.25 mA – 0.1 0.25 V
FLTB Leakage Current V
FLTB
= V
CC1
– – 10 mA
Fault Detection – GAT
X
ON
FLTREF Input Current V
FLTREF
= 0 V −1.0 – – mA
FLTREF Input Linear Range (Note 5) 0 – V
CC1
−
2.0
V
FLTREF Op−amp V
CC1
PSRR (Note 5) 30 – – dB
DRN
X
Clamp Voltage V
CL
I
DRNX
= 10 mA
I
DRNX
= I
CL(MAX)
= 10 mA
27
–
32
33.6
–
37
V
DRN
X
Shorted Load Threshold
GAT
X
Output High
V
FLTREF
= 1.0 V
Register 2: R
1
= 0, R
0
= 0 or
R
4
= 0, R
3
= 0
20 25 30 %
V
FLTREF
Register 2: R
1
= 0, R
0
= 1 or
R
4
= 0, R
3
= 1
45 50 55 %
V
FLTREF
Register 2: R
1
= 1, R
0
= 0 or
R
4
= 1, R
3
= 0
70 75 80 %
V
FLTREF
Register 2: R
1
= 1, R
0
= 1 or
R
4
= 1, R
3
= 1
95 100 105 %
V
FLTREF
DRN
X
Input Leakage Current V
CC1
= V
CC2
= V
DD
= 5.0 V,
ENA
X
= IN
X
= 0 V,
V
DRNX
= V
CL(MIN)
V
CC1
= V
CC2
= V
DD
= 0 V,
ENA
X
= IN
X
= 0 V,
V
DRNX
= V
CL(MIN)
−1.0 – 1.0 mA
4. Designed to meet these characteristics over the stated voltage and temperature recommended operating ranges, though may not be 100%
parametrically tested in production.
5. Guaranteed by design.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P23

NCV7513FTR2G

Mfr. #:
Buy NCV7513FTR2G
Manufacturer:
ON Semiconductor
Description:
IC MTR DRIVER 4.75V-5.25V 32LQFP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet