FDMA1027PT Dual P-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
4©2009 Fairchild Semiconductor Corporation
FDMA1027PT Rev.B
4
Typical Characteristics T
J
= 25 °C unless otherwise noted
Figure 1.
0 0.5 1.0 1.5 2.0 2.5
0
1
2
3
4
5
6
V
GS
= -3 V
V
GS
= -3.5 V
-V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
-I
D
,
DRAIN CURRENT (A)
V
GS
= -1.8 V
V
GS
= -2.5 V
PULSE DURATION = 300
s
DUTY CYCLE = 2% MAX
V
GS
= -2 V
V
GS
= -1.5 V
V
GS
= -4.5 V
On Region Characteristics
Figure 2.
0123456
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= -3.5 V
V
GS
= -2.5 V
V
GS
= -1.8 V
PULSE DURATION = 300
s
DUTY CYCLE = 2%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-I
D
,
DRAIN CURRENT (A)
V
GS
= -2 V
V
GS
= -3 V
V
GS
= -1.5 V
V
GS
=-4.5 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e
-50 -25 0 25 50 75 100 125 150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
I
D
= -3 A
V
GS
= -4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
vs Junction Temperature
Figure 4.
0246810
0.04
0.08
0.12
0.16
0.20
0.24
0.28
T
J
= 125
o
C
I
D
= -1.5 A
T
J
= 25
o
C
-V
GS
,
GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(
)
PULSE DURATION = 300
s
DUTY CYCLE = 2% MAX
O n- Res ista nc e vs G ate to
Source Voltage
Figure 5. Transfer Characteristics
0 0.5 1.0 1.5 2.0 2.5
0
1
2
3
4
5
6
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
J
= 125
o
C
V
DS
= -5 V
PULSE DURATION = 300
s
DUTY CYCLE = 2% MAX
T
J
= -55
o
C
T
J
= 25
o
C
Figure 6.
0 0.2 0.4 0.6 0.8 1.0 1.2
0.0001
0.001
0.01
0.1
1
10
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0 V
-I
S
, REVERSE DRAIN CURRENT (A)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S o u rce to D rai n D iode
Forward Voltage vs Source Current
