IXTT30N60P Datasheet IXTH30N60P, IXTQ30N60P, IXTT30N60P | P1-P3

G = Gate D = Drain

S = Source TAB = Drain

DS99251E(12/05)

PolarHV

TM

Power MOSFET

V

DSS

= 600 V

I

D25

=30 A

R

DS(on)

≤≤

≤ 240 m

ΩΩ

Ω

N-Channel Enhancement Mode

Avalanche Rated

Features

l

Fast Recovery diode

l

Unclamped Inductive Switching (UIS)

rated

l

International standard packages

l

Low package inductance

- easy to drive and to protect

TO-3P (IXTQ)

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 150° C 600 V

V

DGR

T

J

= 25° C to 150° C; R

GS

= 1 MΩ 600 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25° C30A

I

DM

T

C

= 25° C, pulse width limited by T

JM

80 A

I

AR

T

C

= 25° C30A

E

AR

T

C

= 25° C50mJ

E

AS

T

C

= 25° C 1.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150° C, R

G

= 4 Ω

P

D

T

C

= 25° C 540 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 ° C

T

SOLD

Plastic body for 10 s 260 ° C

M

d

Mounting torque (TO-3P, TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS220) 11..65/2.5..15 N/lb.

Weight TO-247 6.0 g

TO-3P 5.5 g

PLUS220 4.0 g

TO-268 5.0 g

IXTH 30N60P

IXTQ 30N60P

IXTT 30N60P

IXTV 30N60P

IXTV 30N60PS

TO-268 (IXTT)

G

S

D (TAB)

PLUS220 (IXTV)

TO-247 (IXTH)

G

D

S

D (TAB)

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 µA 600 V

V

GS(th)

V

DS

= V

GS

, I

D

= 250µA 3.0 5.0 V

I

GSS

V

GS

= ±30 V, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 250 µA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

240 m Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

G

D

S

D (TAB)

PLUS220 (IXTV...S)

G

S

D

D (TAB)

G

S

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTH 30N60P IXTQ 30N60P IXTT 30N60P

IXTV 30N60P IXTV 30N60PS

Fig. 2. Extended Output Characteristics

@ 25

º

C

0

5

10

15

20

25

30

35

40

45

50

55

60

0 3 6 9 12 15 18 21 24 27 30

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6.5V

6V

5.5V

Fig. 1. Output Characteristics

@ 25

º

C

0

3

6

9

12

15

18

21

24

27

30

012345678

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5.5V

5V

6.5V

6V

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 0.5 I

D25

, pulse test 22 25 S

C

iss

5050 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 540 pF

C

rss

53 pF

t

d(on)

29 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 I

D25

20 ns

t

d(off)

R

G

= 4 Ω (External) 80 ns

t

f

25 ns

Q

g(on)

82 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 0.5 I

D25

28 nC

Q

gd

30 nC

R

thJC

0.23 ° C/W

R

thCS

0.21 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 30 A

I

SM

Repetitive 80 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

F

= 25A, -di/dt = 100 A/µs 500 ns

Q

RM

V

R

= 100V 4.0 µC

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

Fig. 3. Output Characteristics

@ 125

º

C

0

3

6

9

12

15

18

21

24

27

30

0 2 4 6 8 10 12 14 16 18

V

D S

- Volts

I

D

- Amperes

V

GS

= 10V

7V

5.5V

5V

4.5V

6V

Fig. 4. R

DS(on

)

Normalized to 0.5 I

D25

Value vs. Junction Temperature

0.4

0.7

1

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

D S ( o n )

- Normalized

I

D

= 30A

I

D

= 15A

V

GS

= 10V

Fig. 6. Drain Current vs. Case

Temperature

0

5

10

15

20

25

30

35

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 5. R

DS(on)

Nor m alize d t o

0.5 I

D25

Value vs. I

D

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 5 10 15 20 25 30 35 40 45 50 55 60

I

D

- Amperes

R

D S ( o n )

- Normalized

T

J

= 125

º

C

T

J

= 25

º

C

V

GS

= 10V

Fig. 7. Input Admittance

0

5

10

15

20

25

30

35

3.5 4 4.5 5 5.5 6 6.5 7

V

G S

- Volts

I

D

- Amperes

T

J

= 125

º

C

25

º

C

-40

º

C

Fig. 8. Transconductance

0

5

10

15

20

25

30

35

40

45

50

0 5 10 15 20 25 30 35 40

I

D

- Amperes

g

f s

- Siemens

T

J

= -40

º

C

25

º

C

125

º

C

IXTH 30N60P IXTQ 30N60P IXTT 30N60P

IXTV 30N60P IXTV 30N60PS

IXTT30N60P

IXTT30N60P

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