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DMN5L06K-7

P1-P3P4-P6
DMN5L06K
Document number: DS30929 Rev. 8 - 2
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN5L06
K
ADVANCE INFORMATION
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= +25°C
50V
2.0Ω @ V
GS
= 5.0V
300 mA
2.5Ω @ V
GS
= 2.5V
200 mA
Description and Applications
This new generation 50V N-Channel Enhancement Mode MOSFET
has been designed to minimize RDS(on) and yet maintain superior
switching performance. This device is ideal for use in Notebook
battery power management and Load switch.
Load switches
Level switches
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Qualification Case Packaging
DMN5L06K-7 Commercial SOT23 3000/Tape & Reel
DMN5L06KQ-7 Automotive SOT23 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Top View
D
G
S
SOT23
DAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
ESD PROTECTED TO 2kV
Source
Gate
Protection
Diode
Gate
Drain
DAB
YM
Equivalent Circuit
DMN5L06K
Document number: DS30929 Rev. 8 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN5L06
K
ADVANCE INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain Source Voltage
V
DSS
50 V
Gate-Source Voltage
V
GSS
20
V
Drain Current (Note 5) Continuous
Pulsed (Note 6)
I
D
300
800
mA
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
P
D
350 mW
Thermal Resistance, Junction to Ambient
R
θJA
357
C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
50
V
V
GS
= 0V, I
D
= 10μA
Zero Gate Voltage Drain Current @ T
C
= +25°C I
DSS
60 nA
V
DS
= 50V, V
GS
= 0V
Gate-Body Leakage
I
GSS
1
500
50
μA
nA
nA
V
GS
= ±12V, V
DS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
GS
= ±5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.49
1.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)




3.0
2.5
2.0
Ω
V
GS
= 1.8V, I
D
= 50mA
V
GS
= 2.5V, I
D
= 50mA
V
GS
= 5.0V, I
D
= 50mA
On-State Drain Current
I
D
(
ON
)
0.5 1.4
A
V
GS
= 10V, V
DS
= 7.5V
Forward Transconductance
|Y
fs
|
200
mS
V
DS
=10V, I
D
= 0.2A
Source-Drain Diode Forward Voltage
V
SD
0.5
1.4 V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
50 pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25 pF
Reverse Transfer Capacitance
C
rss
5.0 pF
Notes: 5. Device mounted on FR-4 PCB
6. Pulse width 10mS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN5L06K
Document number: DS30929 Rev. 8 - 2
3 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN5L06
K
ADVANCE INFORMATION
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
V , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ch
0
-50
-25
0
25
50
75
100
125
150
0
I DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
D
,
1
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
D
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
V GATE SOURCE VOLTAGE (V)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
GS,
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
P1-P3P4-P6

DMN5L06K-7

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Buy DMN5L06K-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET N-Channel
Lifecycle:
New from this manufacturer.
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