NBVSPA017LNHTAG

© Semiconductor Components Industries, LLC, 2010
December, 2010 Rev. 1
1 Publication Order Number:
NBVSPA015/D
NBVSPA015 Series
3.3 V, LVDS
Voltage-Controlled Clock
Oscillator (VCXO)
PureEdget Product Series
The NBVSPXXXX voltagecontrolled crystal oscillator (VCXO)
devices are designed to meet today’s requirements for 3.3 V LVDS
clock generation applications. These devices use a high Q
fundamental mode crystal and Phase Locked Loop (PLL) multiplier to
provide a wide range of frequencies from 60 MHz to 700 MHz
(factory configurable per user specifications) with a pullable range of
±100 ppm and a frequency stability of ±50 ppm. The siliconbased
PureEdget products design provides users with exceptional
frequency stability and reliability. They produce an ultra low jitter and
phase noise LVDS differential output.
The NBVSPXXXX series devices are a member of ON
Semiconductors PureEdget clock family that provides accurate and
precision clock generation solutions.
Available in the industry standard 5.0 x 7.0 x 1.8 mm and in a new
smaller 3.2 x 5.0 x 1.2 mm SMD (CLCC) package on 16 mm tape and
reel in quantities of 1,000.
Features
LVDS Differential Output
Uses High Q Fundamental Mode Crystal
Ultra Low Jitter and Phase Noise 0.5 ps (12 kHz 20 MHz)
Factory Configurable Frequencies from 60 MHz to 700 MHz (see
Standard Frequencies in the Ordering Information Table on page 6)
Pullable Range Minimum of ±100 ppm
Frequency Stability of ±50 ppm
Control Voltage with Positive Slope
Voltage Control Linearity of ±10%
Hermetically Sealed Ceramic SMD Packages of size 5.0 x 7.0 x
1.8 mm and 3.2 x 5.0 x 1.2 mm
Operating Range: 3.3 V ±10%
These Devices are PbFree and are RoHS Compliant
Applications
Networking
SONET
10 Gigabit Ethernet
Networking Base Stations
Broadcasting
http://onsemi.com
MARKING DIAGRAMS
NBVSPXXXX = NBVSPXXXX (±50 ppm)
XXX.XXXX = Output Frequency (MHz)
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = PbFree Package
6 PIN CLCC
LN SUFFIX
CASE 848AB
NBVSPXXXX
XXX.XXXX
AWLYYWWG
6 PIN CLCC
LU SUFFIX
CASE 848AC
NBVSPXXXX
XXX.XXXX
AWLYYWWG
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
NBVSPA015 Series
http://onsemi.com
2
Figure 1. Simplified Logic Diagram
PLL
Clock
Multiplier
Crystal
GNDOEV
C
CLK CLKV
DD
654
123
LVDS
2030
MHz
OE
V
C
GND
CLK
V
DD
CLK
1
2
3
6
5
4
Figure 2. Pin Connections (Top View)
Table 1. PIN DESCRIPTION
Pin No. Symbol I/O Description
1 V
C
(Note 1) Analog Input Analog control voltage input pin that adjusts output oscillation frequency. f
0
=V
C
= 1.65 V
2 OE LVTTL/LVCMOS
Control Input
Output Enable Pin. When left floating pin defaults to logic HIGH and output is active.
See OE pin description Table 2.
3 GND Power Supply Ground at 0 V. Electrical and Case Ground.
4 CLK LVDS Output
NonInverted Clock Output. Typically loaded with 100 W receiver termination resistor
across differential pair.
5 CLK LVDS Output
Inverted Clock Output. Typically loaded with 100 W receiver termination resistor across
differential pair.
6 V
DD
Power Supply Positive Power Supply Voltage. Voltage should not exceed 3.3 V ±10%.
1. Control voltage has a positive slope with a typical linearity of ±10%; V
C
= 1.65 V ± 1 V.
Table 2. OUTPUT ENABLE TRISTATE FUNCTION
OE Pin Output Pins
Open Active
HIGH Level Active
LOW Level High Z
Table 3. ATTRIBUTES
Characteristic Value
Input Default State Resistor
170 kW
ESD Protection Human Body Model
Machine Model
2 kV
200 V
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
2. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
NBVSPA015 Series
http://onsemi.com
3
Table 4. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Units
V
DD
Positive Power Supply GND = 0 V 4.6 V
V
IN
Control Input (V
C
and OE) V
IN
V
DD
+ 200 mV
V
IN
GND 200 mV
V
I
OSC
Output Short Circuit Current CLK to CLK
CLK or CLK to GND
Continuous
Continuous
12
24
mA
T
A
Operating Temperature Range 40 to +85 °C
T
stg
Storage Temperature Range 55 to +120 °C
T
sol
Wave Solder See Figure 4 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 5. DC CHARACTERISTICS (V
DD
= 3.3 V ±10%, GND = 0 V, T
A
= 40°C to +85°C) (Note 3)
Symbol
Characteristic Conditions Min. Typ. Max. Units
I
DD
Power Supply Current 75 100 mA
V
IH
OE and FSEL Input HIGH Voltage 2000 V
DD
mV
V
IL
OE and FSEL Input LOW Voltage GND 300 800 mV
I
IH
Input HIGH Current OE 100 +100
mA
I
IL
Input LOW Current OE 100 +100
mA
DV
OD
Change in Magnitude of V
OD
for
Complementary Output States
(Note 4) 0 1 25 mV
V
OS
Offset Voltage 1125 1375 mV
DV
OS
Change in Magnitude of V
OS
for
Complementary Output States
(Note 4) 0 1 25 mV
V
OH
Output HIGH Voltage 1425 1600 mV
V
OL
Output LOW Voltage 900 1075 mV
V
OD
Differential Output Voltage 250 450 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 100 ohm across differential pair. See Figure 3.
4. Parameter guaranteed by design verification not tested in production.

NBVSPA017LNHTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IC OSC VCXO 156.25MHZ 6CLCC
Lifecycle:
New from this manufacturer.
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