DESCRIPTION
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
4N29 4N30 4N31 4N32 4N33
APPLICATIONS
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ T
A
= 25°C
P
D
250 mW
Derate above 25°C 3.3 mW/°C
EMITTER
I
F
80 mA
Continuous Forward Current
Reverse Voltage V
R
3V
Forward Current - Peak (300 µs, 2% Duty Cycle) I
F
(pk) 3.0 A
LED Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
DETECTOR
BV
CEO
30 V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage BV
CBO
30 V
Emitter-Collector Breakdown Voltage BV
ECO
5V
Detector Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 2.0 mW/°C
Continuous Collector Current I
C
150 mA
4/25/00 200038B
FEATURES
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
-add option .300. (e.g., 4N29.300)
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6
BASE
N/C
SCHEMATIC
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C Unless otherwise specified.)
4/25/00 200038B
GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
Parameter Test Conditions Symbol Min Typ Max Unit
EMITTER
(I
F
= 10 mA) V
F
1.2 1.5 V
*Input Forward Voltage
*Reverse Leakage Current (V
R
= 3.0 V) I
R
0.001 100 µA
*Capacitance (V
F
= 0 V, f = 1.0 MHz) C 150 pF
DETECTOR
(I
C
= 100 µA, I
B
= 0) BV
CEO
30 60
V
*Collector-Emitter Breakdown Voltage
*Collector-Base Breakdown Voltage (I
C
= 100 µA, I
E
= 0) BV
CBO
30 100 V
*Emitter-Collector Breakdown Voltage (I
E
= 100 µA, I
B
= 0) BV
ECO
5.0 8 V
*Collector-Emitter Dark Current (V
CE
= 10 V, Base Open) I
CEO
1 100 nA
DC Current Gain (V
CE
= 5.0 V, I
C
= 500 µA) h
FE
5000
INDIVIDUAL COMPONENT CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C
Unless otherwise specified.)
DC Characteristic Test Conditions Symbol Min Typ Max Units
*Collector Output Current
(1,2)
(4N32, 4N33) 50 (500)
(4N29, 4N30) (I
F
= 10 mA, V
CE
= 10 V, I
B
= 0) I
C
(CTR) 10 (100) mA (%)
(4N31) 5 (50)
*Saturation Voltage
(2)
(4N29, 4N30, 4N32, 4N33)
(I
F
= 8.0 mA, I
C
= 2.0 mA) V
CE(sat)
1.0
V
(4N31) 1.2
TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Min Typ Max Units
Input-Output Isolation Voltage
(6)
(I
I-O
61 µA, Vrms, t = 1 min.) 5300 Vac(rms)
(4N29, 4N30, 4N31, 4N32, 4N33)
V
ISO
*(4N32) VDC 2500
V
*(4N33) VDC 1500
Isolation Resistance
(6)
(V
I-O
= 500 VDC) R
ISO
10
11
1
Isolation Capacitance
(6)
(V
I-O
= , f = 1 MHz) C
ISO
0.8 pf
ISOLATION CHARACTERISTICS
AC Characteristic Test Conditions Symbol Min Typ Max Units
Turn-on Time
(3)
(I
F
= 200 mA, I
C
= 50 mA, V
CC
= 10 V)
t
on
5.0
Turn-off Time
(3)
(4N32, 4N33)
(Fig.7) t
off
100 µs
(4N29, 4N30, 4N31) 40
Bandwidth
(4,5)
BW 30 KHz
TRANSFER CHARACTERISTICS
4N29 4N30 4N31 4N32 4N33
GENERAL PURPOSE 6-PIN
PHOTODARLINGTON OPTOCOUPLERS
4/25/00 200038B
4N29 4N30 4N31 4N32 4N33
Fig. 6 Turn-Off Time vs. Input Current
I
F
- LED INPUT CURRENT (mA)
0.1 1 10 100
T
O
FF
- TIME (µs)
1
10
100
1000
V
CC
= 10 V
R
L
= 100 1
R
L
= 1 k1
R
L
= 10 1
Fig. 3 Collector Current vs. Collector-Emitter Voltage
V
CE
- COLLECTOR -EMITTER VOLTAGE (V)
012345678910
I
C
- COLLECTOR CURRENT (NORMALIZED)
0
2
4
6
8
10
12
14
16
I
F
= 10 mA
I
F
= 5 mA
I
F
= 2 mA
I
F
= 1 mA
NORMALIZED TO:
I
F
= 1 mA
V
CE
= 5 V
Fig. 5 Turn-On Time vs. Input Current
I
F
- LED INPUT CURRENT (mA)
T
O
N
- TIME (µs)
0.1 1 10 100
0.1
1
10
100
1000
R
L
= 100 1
R
L
= 1 k1
R
L
= 10 1
V
CC
= 10 V
T
A
- AMBIENT TEMPERATURE (˚C)
I
C
E
O
- COLLECTOR-EMITTER DARK CURRENT (nA)
Fig. 4 Dark Current vs. Ambient Temperature
0 20406080100
0.01
0.1
1
10
100
1000
10000
V
CE
= 10 V
Fig. 1 Output Current vs. Input Current
I
F
- LED INPUT CURRENT (mA)
0.1 1 10 100
CTR - CURRENT TRANSFER RATIO (NORMALIZED)
0.1
1
NORMALIZED TO:
CTR @ I
F
= 10 mA
T
A
= 25˚C
V
CE
= 5 V
T
A
= 0˚C, 25˚C
T
A
= 70˚C
T
A
= 100˚C
T
A
= -55˚C
T
A
- AMBIENT TEMPERATURE (˚C)
Fig. 2 Current Transfer Ratio vs. Ambient Temperature
-80 -60 -40 -20 0 20 40 60 80 100 120
CTR - CURRENT TRANSFER RATIO (NORMALIZED)
0.1
1
10
NORMALIZED TO:
CTR @ I
F
= 10 mA
T
A
= 25˚C
V
CE
= 10 V

4N33

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Photodarlington Out
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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