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BYW178-TAP

P1-P3P4-P5
BYW178
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
1
Document Number: 86047
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Very fast reverse recovery time
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Ultrafast rectification diode for switching mode power
supplies
949588
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYW178 BYW178-TR 2500 per 10" tape and reel 12 500
BYW178 BYW178-TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYW178 V
R
= 800 V; I
F(AV)
= 3 A SOD-64
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics BYW178 V
R
= V
RRM
800 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
80
ARepetitive peak forward current I
FRM
15
Average forward current I
F(AV)
3
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
Non repetitive reverse avalanche energy I
(BR)R
= 1 A E
R
20 mJ
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction lead Lead length l = 10 mm, T
L
= constant R
thJL
25 K/W
Junction ambient On PC board with spacing 37.5 mm R
thJA
70 K/W
BYW178
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
2
Document Number: 86047
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Typ. Reverse Recovery Current vs. Forward Voltage
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Average Forward Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 3 A V
F
--1.9V
Reverse current
V
R
= V
RRM
I
R
--1μA
V
R
= V
RRM
, T
j
= 100 °C I
R
- - 20 μA
Reverse recovery current
I
F
= 1 A, dI
F
/dt - 50 A/μs,
V
BATT
= 200 V
I
RM
-2.2-
ns
Reverse recovery time
I
F
= 1 A, dI
F
/dt - 50 A/μs,
V
BATT
= 200 V, i
R
= 0.25 x I
RM
t
rr
-50-
Reverse recovery time (JEDEC) I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 t
rr
--60
0 5 10 15 25
0
10
20
30
40
R
thJA
- Therm.Resist. Junction/Ambient (K/W)
I - Lead Length (mm)
30
94 9570
20
ll
T
L
= constant
0.1 1
0
1
2
3
4
5
I – Reverse Recovery Current (A)
RM
I
F
– Forward Current ( A )
10
94 9571
dI
F
/dt = 50A/μs
I – Forward Current (A)
0.001
0.010
0.100
1.000
10.000
100.000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
F
– Forward Voltage ( V )
16458
F
T
j
=25°C
T
j
=175°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 20 40 60 80 100 120 140 160 180
T
amb
– Ambient Temperature (°C )
16459
I –Average Forward Current( A )
FAV
V
R
=V
RRM
half sinewave
R
thJA
25 K/W
l = 10mm
R
thJA
70 K/W
PCB: d = 25 mm
≤
≤
BYW178
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
3
Document Number: 86047
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Reverse Current vs. Junction Temperature
Fig. 6 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 7 - Diode Capacitance vs. Reverse Voltage
Fig. 8 - Thermal Response
1
10
100
1000
25 50 75 100 125 150 175
T
j
– Junction Temperature (°C )16460
V
R
=V
RRM
I – Reverse Current (A )
R
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150 175
T
j
– Junction Temperature (°C )
16461
V
R
=V
RRM
P – Reverse Power Dissipation ( mW)
R
P
R
–Limit
@100 % V
R
P
R
–Limit
@80%V
R
0
10
20
30
40
50
60
70
80
90
0.1 1.0 10.0 100.0
V
R
– Reverse Voltage ( V )
16462
C – Diode Capacitance ( pF )
D
f=1MHz
1
10
100
1000
10
-4
10
2
10
1
10
0
10
2
10
1
10
-0
10
-1
10
-2
10
-3
t
p
- Pulse Length (s)I
FRM
- Repetitive Peak
Forward Current (A)
949562
Z
thp
- Thermal Res
i
st. for Pulse Cond. (K/W)
t
p
/T = 0.5
0.2
0.02
0.05
0.01
0.1
V
RRM
= 600 V
R
thJA
= 70 K/W
T
amb
= 25 °C
45 °C
70 °C
100 °C
P1-P3P4-P5

BYW178-TAP

Mfr. #:
Buy BYW178-TAP
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 3.0 Amp 800 Volt 80 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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