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BSD223PH6327XTSA1

P1-P3P4-P6P7-P9
2014-07-29
Rev.1.6 Page 4
BSD 223P
1 Power dissipation
P
tot
= f (T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.22
0.24
W
0.28
BSD 223P
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: |V
GS
|≥ 4.5 V
0 20 40 60 80 100 120
°C
160
T
A
0
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
-0.36
A
-0.42
BSD 223P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
A
BSD 223P
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
t
p
= 390.0µs
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSD 223P
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2014-07-29
Rev.1.6 Page 5
BSD 223P
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
=25°C
0 0.3 0.6 0.9
V
1.5
-V
DS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-I
D
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0 0.1 0.2 0.3 0.4 0.5
A
0.7
-I
D
0
0.5
1
1.5
2
2.5
3
Ω
4
R
DS(on)
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|≥ 2 x |I
D
| x R
DS(on)max
parameter: T
j
= 25 °C
0 0.5 1 1.5 2
V
3
-V
GS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 °C
0 0.1 0.2 0.3 0.4 0.5
A
0.7
-I
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
S
1.1
g
fs
2014-07-29
Rev.1.6 Page 6
BSD 223P
9 Drain-source on-resistance
R
DS(on)
= f(T
j
)
parameter: I
D
= -0.39 A, V
GS
= -4.5 V
-60 -20 20 60 100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
Ω
1.6
R
DS(on)
typ.
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
-60 -20 20 60 100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
V
1.6
- V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz
0 2 4 6 8 10 12
V
15
-V
DS
1
10
2
10
pF
C
C
iss
C
oss
C
rss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
V
-3
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSD 223P
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
P1-P3P4-P6P7-P9

BSD223PH6327XTSA1

Mfr. #:
Buy BSD223PH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch DPAK-2
Lifecycle:
New from this manufacturer.
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