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PSMN4R3-80ES,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PSMN4R3-80ES
All information pr
ovided in this d
ocument is su
bject to legal dis
claimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 18 Ap
ril 201
1
9 of 15
NXP Semiconductors
PSMN4R3-80ES
N-channel 80 V
, 4.3 m
Ω
standard level MOSFET in I2P
AK
Fig 13.
Drain-source on-state
resistance as a function
of drain current; typical values
Fig 14.
Gate charge waveform definitions
Fig 15.
Gate-source voltage as a fun
ction of gate
charge; typical values
Fig
16.
Input, output a
nd reverse trans
fer capacitances
as a function of
drain-source v
oltage; typical
values
003aaf628
0
6
12
18
0
2
04
0
6
08
0
I
D
(A)
R
DSon
(m
Ω
)
6.0
20.0
4.4
V
GS
(V) = 4.5
003aaa508
V
GS
V
GS(th)
Q
GS1
Q
GS2
Q
GD
V
DS
Q
G(tot)
I
D
Q
GS
V
GS(pl)
003aaf625
0
2.5
5
7.5
10
0
30
60
90
120
Q
G
(nC)
V
GS
(V)
V
DS
= 16V
64V
40V
003aaf626
10
2
10
3
10
4
10
5
10
-1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
rss
C
oss
PSMN4R3-80ES
All information pr
ovided in this d
ocument is su
bject to legal dis
claimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 18 Ap
ril 201
1
10 of 15
NXP Semiconductors
PSMN4R3-80ES
N-channel 80 V
, 4.3 m
Ω
standard level MOSFET in I2P
AK
Fig 17.
Source current as a function of so
urce-drain voltage; typical va
lues
003aaf627
0
20
40
60
80
0
0.3
0.6
0.9
1.2
V
SD
(V)
I
S
(A)
T
j
= 25
°
C
T
j
= 175
°
C
PSMN4R3-80ES
All information pr
ovided in this d
ocument is su
bject to legal dis
claimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 18 Ap
ril 201
1
1
1 of 15
NXP Semiconductors
PSMN4R3-80ES
N-channel 80 V
, 4.3 m
Ω
standard level MOSFET in I2P
AK
7.
Package outline
Fig 18.
Package ou
tline SOT226 (I2
PAK)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT226
TO-262
D
D
1
L
123
L
1
mounting
base
b
1
e
e
Q
b
05
10 mm
scale
P
lastic single-ended package (I2PAK); low-profile 3-lead TO-262
SOT22
6
DIMENSIONS (mm are the original dimensions)
A
E
A
1
c
UNIT
A
1
b
1
D
1
eQ
mm
2.54
L
1
2.6
2.2
3.30
2.79
15.0
13.5
10.3
9.7
1.6
1.2
11
0.7
0.4
1.3
1.0
0.85
0.60
1.40
1.27
4.5
4.1
Ab
D
max
c
E
L
06-02-14
09-08-25
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
PSMN4R3-80ES,127
Mfr. #:
Buy PSMN4R3-80ES,127
Manufacturer:
Nexperia
Description:
MOSFET N-Ch 80V 4.3 mOhms
Lifecycle:
New from this manufacturer.
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PSMN4R3-80ES,127