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VS-HFA30PB120PBF

P1-P3P4-P6P7-P7
VS-HFA30PB120PbF, VS-HFA30PB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 14-Jul-15
1
Document Number: 94069
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 30 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Designed and qualified according to
JEDEC
®
-JESD47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA30PB120... is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200 V and 30 A
continuous current, the VS-HFA30PB120... is especially well
suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultrafast recovery time, the
HEXFRED
®
product line features extremely low values of
peak recovery current (I
RRM
) and does not exhibit any
tendency to “snap-off” during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA30PB120... is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
Package TO-247AC modified (2 pins)
I
F(AV)
30 A
V
R
1200 V
V
F
at I
F
2.3 V
t
rr
typ. 47 ns
T
J
max. 150 °C
Diode variation Single die
1
2
3
TO-247AC modified
Base
common
cathode
2
13
Anode
Cathode
Available
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
1200 V
Maximum continuous forward current I
F
T
C
= 100 °C 30
ASingle pulse forward current I
FSM
120
Maximum repetitive forward current I
FRM
90
Maximum power dissipation P
D
T
C
= 25 °C 350
W
T
C
= 100 °C 140
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
VS-HFA30PB120PbF, VS-HFA30PB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 14-Jul-15
2
Document Number: 94069
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 1200 - -
V
Maximum forward voltage V
FM
I
F
= 30 A
See fig. 1
-2.44.1
I
F
= 60 A - 3.1 5.7
I
F
= 30 A, T
J
= 125 °C - 2.3 4.0
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-1.340
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 1100 4000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 50 75 pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 47 -
nst
rr1
T
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
- 110 170
t
rr2
T
J
= 125 °C - 170 260
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 10 15
A
I
RRM2
T
J
= 125 °C - 16 24
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 650 980
nC
Q
rr2
T
J
= 125 °C - 1540 2310
Peak rate of fall of recovery
current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 270 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 240 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
- - 0.36
°C/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.50 -
Weight
- 5.61 - g
- 0.198 - oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC modified (JEDEC) HFA30PB120
VS-HFA30PB120PbF, VS-HFA30PB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 14-Jul-15
3
Document Number: 94069
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
I
F
- Instantaneous Forward Current (A)
V
F
- Forward Voltage Drop (V)
12345678
1
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0 200 400 600 800 1000 1200
0.0001
0.001
0.01
0.1
1
10
100
150 °C
25 °C
125 °C
100
1
100 1000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
10
10
1000
T
J
= 25 °C
0.01
0.1
0.000001 0.00001 0.0001 0.001 0.01 0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
0.001
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single pulse
(thermal response)
0.234
0.069
0.056
0.000100
0.000434
0.002202
Ri (°C/W)
τi (s)
τ
1
τ
J
R
1
R
2
R
3
τ
C
τ
2
τ
3
Ci = τi/Ri
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-HFA30PB120PBF

Mfr. #:
Buy VS-HFA30PB120PBF
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1200V 30A HEXFRED TO-247 (2 LEAD)
Lifecycle:
New from this manufacturer.
Delivery:
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