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MMSD4148T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 13
1 Publication Order Number:
MMSD4148T1/D
MMSD4148, SMMSD4148
Switching Diode
Features
• SOD−123 Surface Mount Package
• High Breakdown Voltage
• Fast Speed Switching Time
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
100 V
Forward Current I
F
200 mA
Forward Surge Current t < 1 sec
(Note 1) t = 1 msec
I
FSM
1.0
2.0
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
0.5 A
Operating and Storage Junction Temperature
Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Typical Values
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
425
3.4
mW
mW/°C
Thermal Resistance Junction−to−Ambient R
q
JA
290 °C/W
2. FR−5 = 1.0 oz Cu, 1.0 in
z
pad
Device Package Shipping
†
ORDERING INFORMATION
SOD−123
CASE 425
STYLE 1
1
CATHODE
2
ANODE
MMSD4148T1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
5I = Device Code
M = Date Code
G = Pb−Free Package
www.onsemi.com
(Note: Microdot may be in either location)
MMSD4148T3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel
1
5I M G
G
MARKING DIAGRAM
SMMSD4148T1G* SOD−123
(Pb−Free)
3,000 /
Tape & Reel
SMMSD4148T3G* SOD−123
(Pb−Free)
10,000 /
Tape & Reel
MMSD4148, SMMSD4148
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
BR
= 100 mA)
V
(BR)
100 −
V
Reverse Voltage Leakage Current
(V
R
= 20 V)
(V
R
= 75 V)
I
R
−
−
25
5.0
nA
mA
Forward Voltage
(I
F
= 10 mA)
V
F
− 1000
mV
Diode Capacitance
(V
R
= 0 V, f = 1.0 MHz)
C
D
− 4.0
pF
Reverse Recovery Time
(I
F
= I
R
= 10 mA) (Figure 1)
t
rr
− 4.0
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
3. t
p
» t
rr
+10 V
2 k
820 W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
MMSD4148, SMMSD4148
www.onsemi.com
3
I
R
, REVERSE CURRENT (A)μ
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0 1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40 50
0.68
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.64
0.60
0.56
0.52
C
D
, DIODE CAPACITANCE (pF)
246 8
I
F
, FORWARD CURRENT (mA)
T
A
= 25°C
T
A
= -40°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Capacitance
P1-P3P4-P4

MMSD4148T1G

Mfr. #:
Buy MMSD4148T1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 100V 200mA
Lifecycle:
New from this manufacturer.
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