AON2409

AON2409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15
-V
GS
(Volts)
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
0 5 10 15 20 25 30
Capacitance (pF)
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
iss
C
oss
C
rss
V
DS
=-15V
I
D
=-8A
10
µ
s
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-I
D
(Amps)
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Ambient
T
A
=25°C
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction
-
to
-
Ambient
(Note H)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Z
θ
JA
Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse
R
θJA
=79°C/W
Rev 2.0 : October 2014 www.aosmd.com Page 4 of 5
AON2409
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs
Qg
Qgs
Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Id
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
2
E = 1/2 LI
AR
AR
BV
DSS
VDC
DUT
Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
t
t
t
90%
10%
r
on
d(o ff)
f
off
d(o n)
Vdd
Vgs
Vgs
Rg
DUT
VDC
Vgs
Id
Vgs
-
+
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
Rev 2.0 : October 2014
www.aosmd.com
Page 5 of 5

AON2409

Mfr. #:
Manufacturer:
Description:
MOSFET P-CH 30V 8A 6DFN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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