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IXTP340N04T4

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP340N04T4
IXTH340N04T4
Fig. 11. Capacitance
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
100µs
1ms
10ms
100ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
DC
External Lead
Current Limit
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
- 40ºC
25ºC
V
DS
= 10V
Fig. 8. Transconductance
0
40
80
120
160
200
240
280
320
360
0 20 40 60 80 100 120 140
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
V
DS
= 10V
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 30 60 90 120 150 180 210 240 270
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 20V
I
D
= 170A
I
G
= 10mA
© 2016 IXYS CORPORATION, All Rights Reserved
IXTP340N04T4
IXTH340N04T4
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
52
54
56
58
60
62
64
66
160 180 200 220 240 260 280 300 320 340
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 150ºC
R
G
= 3 , V
GS
= 10V
V
DS
= 20V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
100
200
300
400
500
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
r
- Nanoseconds
0
20
40
60
80
100
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 150ºC, V
GS
= 10V
V
DS
= 20V
I
D
= 170A
I
D
= 340A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
36
38
40
42
44
46
48
50
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f
- Nanoseconds
70
80
90
100
110
120
130
140
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 3, V
GS
= 10V
V
DS
= 20V
I
D
= 340A
I
D
= 170A
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
50
52
54
56
58
60
62
64
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3 , V
GS
= 10V
V
DS
= 20V
I
D
= 340A
I
D
= 170A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
36
38
40
42
44
46
48
50
52
160 180 200 220 240 260 280 300 320 340
I
D
- Amperes
t
f
- Nanoseconds
85
90
95
100
105
110
115
120
125
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
R
G
= 3, V
GS
= 10V
V
DS
= 20V
T
J
= 25ºC
T
J
= 150ºC
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
50
100
150
200
250
300
350
2 4 6 8 1012141618
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
T
J
= 150ºC, V
GS
= 10V
V
DS
= 20V
I
D
= 170A
I
D
= 340A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTP340N04T4
IXTH340N04T4
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
IXYS REF: T_340N04T4(T6-M04) 1-27-16
TO-220 (IXTP) Outline
1 = Gate
2,4 = Drain
3 = Source
E
e
Q
L
H1
L1
D1
e1
A2
A1
(D2)
(E1)
c
4
EJECTOR
PIN
1 2 3
3X b2
3X b
A
D
0P
TO-220 (IXTH) Outline
1 = Gate
2,4 = Drain
3 = Source
S
T
U
R
E
0P
E2
b2
b4
L1
A2
E2/2
Q
D
BOTTOM FLATNESS
b
c
e
L
A1
1 2 3
A
4
W
P1-P3P4-P6

IXTP340N04T4

Mfr. #:
Buy IXTP340N04T4
Manufacturer:
Littelfuse
Description:
MOSFET 40V/340A TrenchT4 Power MOSFET
Lifecycle:
New from this manufacturer.
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