BUK7905-40ATE,127 Datasheet BUK7905-40ATE,127 | P7-P9

BUK7905-40ATE_2

Product data sheet Rev. 02 — 10 February 2009 6 of 15

NXP Semiconductors

BUK7905-40ATE

N-channel TrenchPLUS standard level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source

breakdown voltage

I

D

=0.25mA; V

GS

=0V; T

j

=25°C 40 - - V

I

D

=0.25mA; V

GS

=0V; T

j

=-55°C 36 - - V

V

GS(th)

gate-source threshold

voltage

I

D

=1mA; V

DS

= V

GS

; T

j

=25°C;

see Figure 9

234V

I

D

=1mA; V

DS

= V

GS

; T

j

= 175 °C;

see Figure 9

1- - V

I

D

=1mA; V

DS

= V

GS

; T

j

=-55°C;

see Figure 9

--4.4V

I

DSS

drain leakage current V

DS

=40V; V

GS

=0V; T

j

=25°C - 0.1 10 µA

V

DS

=40V; V

GS

=0V; T

j

= 175 °C - - 250 µA

V

(BR)GSS

gate-source breakdown

voltage

I

G

=1mA; V

DS

=0V; T

j

≤ 175 °C;

T

j

≥ -55 °C

20 22 - V

I

G

=-1mA; V

DS

=0V; T

j

≤ 175 °C;

T

j

≥ -55 °C

20 22 - V

I

GSS

gate leakage current V

DS

=0V; V

GS

=10V; T

j

= 25 °C - 22 1000 nA

V

DS

=0V; V

GS

=-10V; T

j

= 25 °C - 22 1000 nA

V

DS

=0V; V

GS

=10V; T

j

=175°C --10µA

V

DS

=0V; V

GS

=-10V; T

j

=175°C --10µA

R

DSon

drain-source on-state

resistance

V

GS

=10V; I

D

=50A; T

j

=25°C;

see Figure 7; see Figure 8

-4.55mΩ

V

GS

=10V; I

D

=50A; T

j

= 175 °C;

see Figure 7

; see Figure 8

--9.5mΩ

V

F(TSD)

temperature sense

diode forward voltage

I

F

= 250 µA; T

j

= 25 °C 648 658 668 mV

S

F(TSD)

temperature sense

diode temperature

coefficient

I

F

= 250 µA; T

j

≥ -55 °C; T

j

≤ 175 °C -1.4 -1.54 -1.68 mV/K

V

F(TSD)hys

temperature sense

diode forward voltage

hysteresis

I

F

≤ 250 µA; I

F

≥ 125 µA; T

j

=25°C 25 32 50 mV

Dynamic characteristics

Q

G(tot)

total gate charge I

D

=25A; V

DS

=32V; V

GS

=10V;

T

j

=25°C; see Figure 14

-118-nC

Q

GS

gate-source charge - 16 - nC

Q

GD

gate-drain charge - 57 - nC

C

iss

input capacitance V

GS

=0V; V

DS

=25V; f=1MHz;

T

j

=25°C; see Figure 12

- 4500 - pF

C

oss

output capacitance - 1500 - pF

C

rss

reverse transfer

capacitance

- 960 - pF

BUK7905-40ATE_2

Product data sheet Rev. 02 — 10 February 2009 7 of 15

NXP Semiconductors

BUK7905-40ATE

N-channel TrenchPLUS standard level FET

t

d(on)

turn-on delay time V

DS

=30V; R

L

=1.2Ω; V

GS

=10V;

R

G(ext)

=10Ω; T

j

=25°C

-35-ns

t

r

rise time - 115 - ns

t

d(off)

turn-off delay time - 155 - ns

t

f

fall time - 110 - ns

L

D

internal drain

inductance

from upper edge of mounting base to

centre of die; T

j

=25°C

-2.5-nH

L

S

internal source

inductance

from source lead to source bond pad;

T

j

=25°C

-7.5-nH

Source-drain diode

V

SD

source-drain voltage I

S

=40A; V

GS

=0V; T

j

=25°C;

see Figure 17

- 0.85 1.2 V

t

rr

reverse recovery time I

S

=20A; dI

S

/dt = -100 A/µs; V

GS

=-10V;

V

DS

=30V; T

j

=25°C

-96-ns

Q

r

recovered charge - 224 - nC

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit

BUK7905-40ATE_2

Product data sheet Rev. 02 — 10 February 2009 8 of 15

NXP Semiconductors

BUK7905-40ATE

N-channel TrenchPLUS standard level FET

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

03ni86

0

100

200

300

400

0246810

V

DS

(V)

I

D

(A)

4

4.5

5

5.5

6

6.5

7

7.5

8

10

20

Label is V

GS

(V)

03ni88

0

4

8

12

4 8 12 16 20

V

GS

(V)

R

DSon

(mΩ)

03ni87

0

5

10

15

20

0 100 200 300 400

I

D

(A)

R

DSon

(mΩ)

V

GS

= 5.5 V

6 V

6.5 V

7 V

8 V

10 V

20 V

T

j

(°C)

−60 180120060

03ni30

0.8

1.2

0.4

1.6

2.0

a

0

BUK7905-40ATE,127

BUK7905-40ATE,127

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