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VS-GA250SA60S

P1-P3P4-P6P7-P9
VS-GA250SA60S
www.vishay.com
Vishay Semiconductors
Revision: 20-May-16
1
Document Number: 94704
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Gate Bipolar Transistor
Ultralow V
CE(on)
, 250 A
Note
(1)
Maximum collector current admitted 100 A to do not exceed the
maximum temperature of terminals
FEATURES
• Standard: optimized for minimum saturation
voltage and low speed
• Lowest conduction losses available
• Fully isolated package (2500 V
AC
)
• Very low internal inductance (5 nH typical)
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
Note
(1)
Maximum collector current admitted 100 A to do not exceed the maximum temperature of terminals
PRODUCT SUMMARY
V
CES
600 V
V
CE(on)
(typical) at 200 A, 25 °C 1.33 V
I
C
at T
C
= 90 °C
(1)
250 A
Speed DC to 1 kHz
Package SOT-227
Circuit Single switch no diode
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
(1)
T
C
= 25 °C 400
A
T
C
= 90 °C 250
Pulsed collector current I
CM
Repetitive rating; V
GE
= 20 V, pulse width limited by
maximum junction temperature
400
Clamped Inductive load current I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V, L = 10 μH, R
g
= 2.0 400
Gate to emitter voltage V
GE
± 20 V
Power dissipation P
D
T
C
= 25 °C 961
W
T
C
= 90 °C 462
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
-40 - 150 °C
Thermal resistance junction to case R
thJC
- - 0.13
°C/W
Thermal resistance case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30-g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Case style SOT-227
VS-GA250SA60S
www.vishay.com
Vishay Semiconductors
Revision: 20-May-16
2
Document Number: 94704
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse width 80 μs; duty factor 0.1 %
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 1 mA 600 - -
V
Emitter to collector breakdown voltage
V
(BR)ECS
(1)
V
GE
= 0 V, I
C
= 1.0 A 18 - -
Collector to emitter voltage V
CE(on)
I
C
= 100 A
V
GE
= 15 V
- 1.10 1.3
I
C
= 200 A - 1.33 1.66
I
C
= 100 A, T
J
= 125 °C - 1.02 -
I
C
= 200 A, T
J
= 125 °C - 1.32 -
I
C
= 100 A, T
J
= 150 °C - 1.02 -
I
C
= 200 A, T
J
= 150 °C - 1.33 -
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 3.0 4.5 6.0
V
CE
= V
GE
, I
C
= 250 μA, T
J
= 125 °C - 3.1 -
Temperature coefficient of threshold voltage V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA, 25 °C to 125 °C - -12 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 600 V - 20 1000 μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 0.2 -
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - 0.6 10
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 100 A, V
CC
= 600 V, V
GE
= 15 V
- 770 1200
nCGate-to-emitter charge (turn-on) Q
ge
- 100 150
Gate-to-collector charge (turn-on) Q
gc
- 260 380
Turn-on switching loss E
on
T
J
= 25 °C
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 5.0 
L = 500 μH
Energy
losses
include tail
and diode
recovery.
Diode used
60APH06
-0.55-
mJTurn-off switching loss E
off
-25-
Total switching loss E
tot
- 25.5 -
Turn-on delay time t
d(on)
- 267 -
ns
Rise time t
r
-42-
Turn-off delay time t
d(off)
- 310 -
Fall time t
f
- 450 -
Turn-on switching loss E
on
T
J
= 125 °C
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 5.0 
L = 500 μH
-0.67-
mJTurn-off switching loss E
off
- 43.0 -
Total switching loss E
tot
- 43.7 -
Turn-on delay time t
d(on)
- 275 -
ns
Rise time t
r
-50-
Turn-off delay time t
d(off)
- 350 -
Fall time t
f
- 700 -
Internal emitter inductance L
E
Between lead and
center of die contact
-5.0- nH
Input capacitance C
ies
V
GE
= 0 V , V
CC
= 30 V, f = 1.0 MHz
- 16 250 -
pFOutput capacitance C
oes
- 1040 -
Reverse transfer capacitance C
res
- 190 -
VS-GA250SA60S
www.vishay.com
Vishay Semiconductors
Revision: 20-May-16
3
Document Number: 94704
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
Fig. 3 - Typical IGBT Transfer Characteristics
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, V
GE
= 15 V
I
C
-
Continuous
Collector Current (A)
Allowable Case Temperature (°C)
80
100
120
140
160
0
20
40
60
0 50 100 150 200 250 300 350 400 450 500
1
10
100
1000
0.50.0
1.0
1.5 2.0
2.5
V
CE
- Collector to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
T
J
= 150 °C
V
GE
= 15 V
T
J
= 25 °C
T
J
= 125 °C
1
10
100
1000
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GE
- Gate to Emitter Voltage (V)
I
C
- Collector to Emitter Current (A)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
V
CE
-
Collector-to-Emitter Voltage (V)
I
CES
-
Collector Current (mA)
0.01
0.1
1
10
0.0001
0.001
100 200 300 400 500 600
T
J
= 150 °C
T
J
= 25 °C
T
J
= 125 °C
V
GEth
-
Threshold Voltage (V)
3.5
4
4.5
5
5.5
6
2
2.5
3
0.20 0.40 0.60 0.80 1.00
T
J
= 25 °C
T
J
= 125 °C
I
C
-
Continuous
Collector Current (mA)
T
J
-
Junction Temperature (°C)
V
CE
-
Collector-to-Emitter Voltage (V)
0.5
1
1.5
2
2.5
0 20 40 60 80 100 120 140 160
Ic = 100 A
Ic = 200 A
Ic = 400 A
P1-P3P4-P6P7-P9

VS-GA250SA60S

Mfr. #:
Buy VS-GA250SA60S
Manufacturer:
Vishay Semiconductors
Description:
IGBT Transistors 600 Volt 250 Amp
Lifecycle:
New from this manufacturer.
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