© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 5
1 Publication Order Number:
MCR106/D
MCR106-6, MCR106-8
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume consumer applications
such as temperature, light and speed control; process and remote control,
and warning systems where reliability of operation is important.
Features
• Glass-Passivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= −40 to 110°C, Sine Wave 50 to 60
Hz, R
GK
= 1 kW) MCR106−6
MCR106−8
V
DRM,
V
RRM
400
600
V
On-State RMS Current, (T
C
= 93°C)
(180° Conduction Angles)
I
T(RMS)
4.0 A
Average On−State Current,
(180° Conduction Angles; T
C
= 93°C)
I
T(AV)
2.55 A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 110°C)
I
TSM
25 A
Circuit Fusing Considerations, (t = 8.3 ms) I
2
t 2.6 A
2
s
Forward Peak Gate Power,
(T
C
= 93°C, Pulse Width v 1.0 ms)
P
GM
0.5 W
Forward Average Gate Power,
(T
C
= 93°C, t = 8.3 ms)
P
G(AV)
0.1 W
Forward Peak Gate Current,
(T
C
= 93°C, Pulse Width v 1.0 ms)
I
GM
0.2 A
Peak Reverse Gate Voltage,
(T
C
= 93°C, Pulse Width v 1.0 ms)
V
RGM
6.0 V
Operating Junction Temperature Range T
J
−40 to +110 °C
Storage Temperature Range T
stg
−40 to +150 °C
Mounting Torque (Note 2) − 6.0 in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200-F006 or
equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. (See AN209B). For soldering purposes (either terminal connection
or device mounting), soldering temperatures shall not exceed +200°C. For
optimum results, an activated flux (oxide removing) is recommended.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCRs
4 AMPERES RMS
400 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
K
G
A
TO−225AA
CASE 77
STYLE 2
1
2
3
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
http://onsemi.com
YWW
CR
106−xG
MARKING DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
Y = Year
WW = Work Week
CR106−x = Device Code
x = 6 or 8
G=Pb−Free Package
