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CQY37N

P1-P3P4-P5
Document Number: 81002 For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.7, 08-Mar-11 1
Infrared Emitting Diode, 950 nm, GaAs
CQY37N
Vishay Semiconductors
DESCRIPTION
CQY37N is an infrared, 950 nm emitting diode in GaAs
technology molded in a miniature, clear plastic package with
lens.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• Peak wavelength:
p
= 950 nm
• High reliability
• Angle of half intensity: = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW17N
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Radiation source in near infrared range
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
94 8638-2
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) (deg)
P
(nm) t
r
(ns)
CQY37N 5 ± 12 950 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
CQY37N Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-
¾
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Surge forward current t
p
100 μs I
FSM
2A
Power dissipation P
V
160 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 25 to + 85 °C
Storage temperature range T
stg
- 25 to + 100 °C
Soldering temperature t 3 s T
sd
245 °C
Thermal resistance junction/ambient Leads not soldered R
thJA
450 K/W
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81002
2 Rev. 1.7, 08-Mar-11
CQY37N
Vishay Semiconductors
Infrared Emitting Diode, 950 nm,
GaAs
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21319
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 450 K/W
0
20
40
60
80
100
120
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
21320
I
F
- Forward Current (mA)
R
thJA
= 450 K/W
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA, t
p
20 ms V
F
1.3 1.6 V
Temperature coefficient of V
F
I
F
= 100 mA TK
VF
- 1.3 mV/K
Breakdown voltage I
R
= 100 μA V
(BR)
5μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 C
j
50 pF
Radiant intensity I
F
= 50 mA, t
p
20 ms I
e
2.2 5 11 mW/sr
Radiant power I
F
= 50 mA, t
p
20 ms
e
4.8 10 17.8 mW
Temperature coefficient of
e
I
F
= 50 mA TK
e
- 0.8 %/K
Angle of half intensity ± 12 deg
Peak wavelength I
F
= 50 mA
p
950 nm
Spectral bandwidth I
F
= 50 mA  50 nm
Rise time
I
F
= 100 mA t
r
800 ns
I
F
= 1.5 A, t
p
/T = 0.01, t
p
 10 μs t
r
400 ns
Virtual source diameter d 1.2 mm
94 7996
10
1
10
0
10
2
10
3
10
4
10
-1
I - Forward Current (mA)
F
43210
V
F
- Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
V
F rel
- Relative Forward Voltage (V)
94 7990
T
amb
- Ambient Temperature (°C)
100806040200
I
F
= 10 mA
Document Number: 81002 For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.7, 08-Mar-11 3
CQY37N
Infrared Emitting Diode, 950 nm,
GaAs
Vishay Semiconductors
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Radiant Power vs. Forward Current
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
Fig. 8 - Relative Radiant Power vs. Wavelength
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
94 7920
10
3
10
1
10
2
10
4
10
0
0.1
1
10
100
I
F
– Forward Current (mA)
I – Radiant Intensity (mW/sr)
e
0.1
1
10
100
11 0 100 1000
13718
I
F
- Forward Current (mA)
- Radiant Power (mW)
e
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
900 950
0
0.25
0.5
0.75
1.0
1.25
λ - Wavelength (nm)
1000
94 7994
Φ
e rel
- Relative Radiant Power
I
F
= 100 mA
P1-P3P4-P5

CQY37N

Mfr. #:
Buy CQY37N
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters 950nm, T- , 5mW/sr, +/-12degrees
Lifecycle:
New from this manufacturer.
Delivery:
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