Table 14: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision D)
Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0:
One bank ACTIVATE-to-PRECHARGE
I
DD0
600 520 480 mA
Operating current 1:
One bank ACTIVATE-to-READ-to-PRECHARGE
I
DD1
696 656 616 mA
Precharge power-down current: Slow exit I
DD2P0
160 160 160 mA
Precharge power-down current: Fast exit I
DD2P1
296 256 240 mA
Precharge quiet standby current I
DD2Q
376 336 312 mA
Precharge standby current I
DD2N
400 360 320 mA
Precharge standby ODT current I
DD2NT
400 360 320 mA
Active power-down current I
DD3P
504 464 424 mA
Active standby current I
DD3N
496 456 416 mA
Burst read operating current I
DD4R
1496 1336 1176 mA
Burst write operating current I
DD4W
1320 1160 1000 mA
Refresh current I
DD5
1760 1680 1640 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
176 176 176 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
224 224 224 mA
All banks interleaved read current I
DD7
2320 2000 1680 mA
Reset current I
DD8
176 176 176 mA
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef8441a29e
jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Table 15: DDR3 I
DD
Specifications and Conditions – 4GB (Die Revision E)
Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0:
One bank ACTIVATE-to-PRECHARGE
I
DD0
440 376 352 mA
Operating current 1:
One bank ACTIVATE-to-READ-to-PRECHARGE
I
DD1
528 496 472 mA
Precharge power-down current: Slow exit I
DD2P0
144 144 144 mA
Precharge power-down current: Fast exit I
DD2P1
256 224 208 mA
Precharge quiet standby current I
DD2Q
256 224 216 mA
Precharge standby current I
DD2N
256 323 224 mA
Precharge standby ODT current I
DD2NT
312 280 256 mA
Active power-down current I
DD3P
304 280 256 mA
Active standby current I
DD3N
304 280 256 mA
Burst read operating current I
DD4R
1256 1120 984 mA
Burst write operating current I
DD4W
1000 880 760 mA
Refresh current I
DD5
1880 1824 1792 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
160 160 160 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
200 200 200 mA
All banks interleaved read current I
DD7
1760 1520 1280 mA
Reset current I
DD8
160 160 160 mA
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef8441a29e
jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Serial Presence-Detect EEPROM
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 16: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
DDSPD
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Input low voltage: Logic 0; All inputs V
IL
–0.45 V
DDSPD
x 0.3 V
Input high voltage: Logic 1; All inputs V
IH
V
DDSPD
x 0.7 V
DDSPD
+ 1.0 V
Output low voltage: I
OUT
= 3mA V
OL
0.4 V
Input leakage current: V
IN
= GND to V
DD
I
LI
0.1 2.0 µA
Output leakage current: V
OUT
= GND to V
DD
I
LO
0.05 2.0 µA
Table 17: Serial Presence-Detect EEPROM AC Operating Conditions
Parameter/Condition Symbol Min Max Units Notes
Clock frequency
t
SCL 10 400 kHz
Clock pulse width HIGH time
t
HIGH 0.6 µs
Clock pulse width LOW time
t
LOW 1.3 µs
SDA rise time
t
R 300 µs 1
SDA fall time
t
F 20 300 ns 1
Data-in setup time
t
SU:DAT 100 ns
Data-in hold time
t
HD:DI 0 µs
Data-out hold time
t
HD:DAT 200 900 ns
Data out access time from SCL LOW
t
AA:DAT 0.2 0.9 µs 2
Start condition setup time
t
SU:STA 0.6 µs 3
Start condition hold time
t
HD:STA 0.6 µs
Stop condition setup time
t
SU:STO 0.6 µs
Time the bus must be free before a new transition can
start
t
BUF 1.3 µs
WRITE time
t
W 10 ms
Notes:
1. Guaranteed by design and characterization, not necessarily tested.
2. To avoid spurious start and stop conditions, a minimum delay is placed between the fall-
ing edge of SCL and the falling or rising edge of SDA.
3. For a restart condition, or following a WRITE cycle.
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM
Serial Presence-Detect EEPROM
PDF: 09005aef8441a29e
jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.

MT8JTF12864HZ-1G1G1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 1GB 204SODIMM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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