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MT8JTF12864HZ-1G4G1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 11: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM
DRAM Operating Conditions
PDF: 09005aef8441a29e
jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 12: DDR3 I
DD
Specifications and Conditions – 1GB (Die Revision G)
Values are for the MT41J128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0:
One bank ACTIVATE-to-PRECHARGE
I
DD0
560 520 480 mA
Operating current 1:
One bank ACTIVATE-to-READ-to-PRECHARGE
I
DD1
720 680 640 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 96 mA
Precharge power-down current: Fast exit I
DD2P1
240 240 200 mA
Precharge quiet standby current I
DD2Q
320 280 280 mA
Precharge standby current I
DD2N
360 320 280 mA
Precharge standby ODT current I
DD2NT
440 400 360 mA
Active power-down current I
DD3P
380 240 240 mA
Active standby current I
DD3N
360 320 320 mA
Burst read operating current I
DD4R
1120 1000 880 mA
Burst write operating current I
DD4W
1160 1000 880 mA
Refresh current I
DD5
1360 1320 1280 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
64 64 64 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
80 80 80 mA
All banks interleaved read current I
DD7
1960 1880 1560 mA
Reset current I
DD8
112 112 112 mA
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef8441a29e
jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Table 13: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision M)
Values are for the MT41J256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0:
One bank ACTIVATE-to-PRECHARGE
I
DD0
560 520 480 mA
Operating current 1:
One bank ACTIVATE-to-READ-to-PRECHARGE
I
DD1
640 600 560 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 96 mA
Precharge power-down current: Fast exit I
DD2P1
296 256 216 mA
Precharge quiet standby current I
DD2Q
230 280 240 mA
Precharge standby current I
DD2N
344 304 264 mA
Precharge standby ODT current I
DD2NT
360 320 280 mA
Active power-down current I
DD3P
400 360 320 mA
Active standby current I
DD3N
440 400 360 mA
Burst read operating current I
DD4R
1248 1128 1040 mA
Burst write operating current I
DD4W
1160 1040 920 mA
Refresh current I
DD5
1560 1520 1480 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 96 mA
Self refresh temperature current (SRT-enabled):
MAX T
C
= 95°C
I
DD6ET
120 120 120 mA
All banks interleaved read current I
DD7
1920 1800 1680 mA
Reset current I
DD8
112 112 112 mA
1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef8441a29e
jtf8c128_256_512x64hz.pdf - Rev. G 5/13 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MT8JTF12864HZ-1G4G1

Mfr. #:
Buy MT8JTF12864HZ-1G4G1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 1GB 204SODIMM
Lifecycle:
New from this manufacturer.
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