SPEC NO: DSAM8409 REV NO: V.1A DATE: APR/10/2013 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Y.Liu ERP: 1301002031
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
*Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min. Typ.
Green (AlGaInP) White Diffused
52000 95000
Common Anode, Rt.
Hand Decimal
*14000 *33000
SA10-21CGKWA
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3. Wavelength value is traceable to the CIE127-2007 compliant national standards.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Green 574 nm I
F=20mA
λD [1] Dominant Wavelength Green 570 nm I
F=20mA
Δλ1/2 Spectral Line Half-width Green 20 nm I
F=20mA
C Capacitance Green 15 pF V
F=0V;f=1MHz
V
F [2]
Forward Voltage
(DP)
Green
4.2
(2.1)
5.0
(2.5)
V I
F=20mA
I
R
Reverse Current
(Per chip)
Green
10
(10)
uA
V
R=5V
(V
R=5V)
Parameter Green Units
Power dissipation
(DP)
150
(75)
mW
DC Forward Current 30 mA
Peak Forward Current [1] 150 mA
Reverse Voltage
(Per chip)
5
(5)
V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds