© Semiconductor Components Industries, LLC, 2017 1 Publication Order Number :
March 2017 - Rev. 0 NVATS4A101PZ/D
www.onsemi.com
NVATS4A101PZ
Power MOSFET
30 V, 30 mΩ, 27 A, P-Channel
The NVATS4A101PZ is a power MOSFET designed for compact size and
high efficiency which can achieve high thermal performance.
AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive
applications.
Features
Low On-Resistance
High Current Capability
100% Avalanche Tested
AEC-Q101 qualified and PPAP capable
ATPAK package is pin-compatible with DPAK (TO-252)
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Reverse Battery Protection
Load Switch
Automotive Front Lighting
Automotive Body Controllers
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)
Parameter Symbol Value Unit
Drain to Source Voltage
V
DSS
30 V
Gate to Source Voltage
V
GSS
20 V
Drain Current (DC)
I
D
27 A
Drain Current (Pulse)
PW 10 s, duty cycle 1%
I
DP
81 A
Power Dissipation
Tc = 25C
P
D
36 W
Operating Junction and
Storage Temperature
Tj, Tstg 55 to +175 C
Avalanche Energy (Single Pulse) (Note 2)
E
AS
25 mJ
Avalanche Current (Note 3)
I
AV
13 A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : V
DD
= 10 V, L = 200 H, I
AV
= 13 A
3 : L ≤ 200 H, Single pulse
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction to Case Steady State (Tc = 25C) R
JC
4.1
C/W
Junction to Ambient (Note 4) R
JA
80.7
C/W
Note 4 : Surface mounted on FR4 board using a 130 mm
2
, 1 oz. Cu pad.
ELECTRICAL CONNECTION
P-Channel
V
DSS
R
DS
(on) Max I
D Max
30 V
30 mΩ @ 10 V
27 A
51 mΩ @ 4.5 V
1
3
2,4
1 : Gate
2 : Drain
3 : Source
4 : Drain
1
2
3
4
ATPA
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
MARKING