OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

Z0402MF 1AA2

P1-P3P4-P6P7-P8
May 2006 Rev 7 1/8
8
Z04
Standard
4 A Triacs
Main features
Description
The Z04 series is suitable for general purpose AC
switching applications. They can be found in
applications such as home appliances
(electrovalve, pump, door lock, small lamp
control), fan speed controllers,...
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
Order codes
Symbol Value Unit
I
T(RMS)
4A
V
DRM
/V
RRM
600 to 800 V
I
GT (Q
1
)
3 to 25 mA
Part Number Marking
Z04xxyF
(1)
1. xx = sensitivity, y = voltage
Z04xxyF
(1)
A2
A1
G
G
A1
A2
TO202-3
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine wave)
T
amb
= 25° C
4A
T
l
= 30° C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
j
initial = 25° C)
F = 50 Hz t = 20 ms 20
A
F = 60 Hz t = 16.7 ms 21
I
²
tI
²
t Value for fusing t
p
= 10 ms 2.2 A
²
s
dI/dt
Critical rate of rise of on-state current I
G
=
2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125° C 20 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125° C 1.2 A
P
G(AV)
Average gate power dissipation T
j
= 125° C 0.2 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
° C
www.st.com
Characteristics Z04
2/8
1 Characteristics
Table 2. Electrical Characteristics (Tj = 25° C, unless otherwise specified)
Symbol Test Conditions Quadrant
Z04
Unit
02 05 09 10
I
GT
(1)
1. minimum IGT is guaranted at 5% of IGT max.
V
D
= 12 V R
L
= 30 Ω
I - II - III - IV
MAX
.
351025mA
V
GT
ALL
MAX
.
1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125° C
ALL MIN. 0.2 V
I
H
(2)
2. for both polarities of A2 referenced to A1.
I
T
= 50 mA
MAX
.
351025mA
I
L
I
G
= 1.2 I
GT
I - III - IV
MAX
.
6101525
mA
II 12 15 25 50
dV/dt
(2)
V
D
= 6 % V
DRM
gate open T
j
= 110° C MIN. 10 20 100 200 V/µs
(dV/dt)c
(2)
(dI/dt)c = 1.8 A/ms T
j
= 110° C MIN. 0.5 1 2 5 V/µs
Table 3. Static Characteristics
Symbol Test Conditions Value Unit
V
TM
(1)
1. for both polarities of A2 referenced to A1.
I
TM
= 5.5 A t
p
= 380 µs T
j
= 25° C MAX. 2.0 V
V
to
(1)
Threshold voltage T
j
= 125° C MAX. 0.95 V
R
d
(1)
Dynamic resistance T
j
= 125° C MAX. 180 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25° C
MAX.
5µA
T
j
= 125° C 0.5 mA
Table 4. Thermal resistances
Symbol Parameter Value Unit
R
th(j-I)
Junction to lead (AC) 15 ° C/W
R
th(j-a)
Junction to ambient 100 ° C/W
Z04 Characteristics
3/8
Figure 1. Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2. RMS on-state current versus
ambient temperature (full cycle)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
1
2
3
4
5
6
7
P(W)
I (A)
T(RMS)
0 25 50 75 100 125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I (A)
T(RMS)
R = 100°C/W
th(j-a)
R=
th(j-a)
R
th(j-l)
T (°C)
amb
Figure 3. Relative variation of thermal
impedance versus pulse
duration
Figure 4. Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-3
1E-2
1E-1
1E+0
K=[Z /R
th(j-a) th(j-a)
]
t (s)
p
-40 -20 0 20 40 60 80 100 120 140
0.0
0.5
1.0
1.5
2.0
2.5
I,I,I[T] /
GTHL j
I , I , I [T =25°C]
GTHL j
T (°C)
j
I
GT
I
H
&I
L
Figure 5. Surge peak on-state current
versus number of cycles
Figure 6. Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width t
p
< 10 ms and corresponding
value of I
2
t
1 10 100 1000
0
5
10
15
20
25
One cycle
t=20ms
I (A)
TSM
Number of cycles
Non repetitive
T initial = 25°C
j
Repetitive
T = 25°C
amb
0.01 0.10 1.00 10.00
1
10
100
500
t (ms)
p
I (A), I t (A s)
TSM
22
It
2
dI/dt limitation:
20A/µs
T initial = 25°C
j
I
TSM
P1-P3P4-P6P7-P8

Z0402MF 1AA2

Mfr. #:
Buy Z0402MF 1AA2
Manufacturer:
STMicroelectronics
Description:
Triacs 4.0 Amp 600 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet