All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 03, 2018-07-03
PXAC261212FC
Package H-37248-4
Thermally-Enhanced High Power RF LDMOS FET
120 W, 28 V, 2496 – 2690 MHz
Description
The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric
designed for use in multi-standard cellular power amplifier applications
in the 2496 to 2690 MHz frequency band. It features dual-path design,
input and output matching, and a thermally-enhanced package with
earless flange. Manufactured with Wolfspeed's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Features
• Broadband internal matching
• Asymmetric design
- Main P
1dB
= 50 W
- Peak P
1dB
= 75 W
• CW performance in Doherty configuration,
2635 MHz, 28 V
- Output power at P
1dB
= 107 W
- Gain = 14.4 dB
- Efficiency = 57%
• Integrated ESD protection: Human Body Model,
class 1C (per JESD22-A114)
• Capable of handling 10:1 VSWR @28 V, 120 W
(CW) output power
• Low thermal resistance
• Pb-free and RoHS-compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)
V
DD
= 28 V, V
GS(peak)
= 1.3 V, I
DQ
= 280 mA, P
OUT
= 28 W average, ƒ
1
= 2630 MHz, ƒ
2
= 2640 MHz. 3GPP WCDMA signal:
3.84 MHz bandwidth, 8 dB PAR @0.01% CCDF.
Characteristic Symbol Min Typ Max Unit
Linear Gain G
ps
14.2 15.0 — dB
Drain Efficiency
h
D
45 48 — %
Intermodulation Distortion IMD — –25 –22 dBc
0
10
20
30
40
50
60
11
12
13
14
15
16
17
29 33 37 41 45 49 53
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier 3GPP WCDMA
V
DD
= 28 V, I
DQ
= 280 mA,
V
GS
= 2.62 V, ƒ = 2635 MHz
10 MHz carrier spacing, 8 dB PAR
3.84 MHz bandwidth
Gain
Efficienc
c261212fc-gr1c
PXAC261212FC
