2SD2705STP Datasheet 2SD2704KT146, 2SD2705STP | P1-P3

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○

c

2012.01 - Rev.C

For Muting (20V, 0.3A)

2SD2704K

Features Dimensions (Unit : mm)

1) High DC current gain.

hFE = 820 to 2700

2) High emitter-base voltage.

VEBO = 25V (Min.)

3) Low Ron

Ron= 0.7 (Typ.)

Structure

Epitaxial planar type

NPN silicon transistor

Packaging specifications

Package

Code T146

3000

Taping

Basic ordering

unit (pieces)

2SD2704K

Type

Absolute maximum ratings (Ta=25C)

Parameter

V

CBO

VCEO

VEBO

IC

PC

Tj

Tstg

50 V

V

A

W

°C

20

25

0.3

0.2

150

−55 to +150

Symbol Limits Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Electrical characteristics (Ta=25C)

Parameter Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

f

T

∗

Cob

Min.

50

20

25

−

50

35

3.9

−

0.1

100

−

V

I

C

=10μA

I

C

=1mA

I

E

=10μA

V

CB

=50V

V

EB

=25V

I

C

/I

B

=30mA/3mA

V

CE

=6V, I

E

= −4mA, f=10MHz

V

CB

=10V, I

E

=0A, f=1MHz

V

μA

h

FE

820

−

2700

V

CE

=2V, I

C

=4mA−

mV

MHz

pF

Ron

−

0.7

− I

B

=5mA, Vi=100mV(rms), f=1kHz

Ω

Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

Output On-resistance

∗

Measured using pulse current

(

2

)

(

1

)

2.8

1.6

0.4

(

3

)

2.9

1.9

0.95 0.95

0.8

0.15

0.3Min.

1.1

2SD2704K

(1) Emitter

(2) Base

(3) Collector

ROHM : SMT3

EIAJ : SC-59

Abbreviated symbol : XL

Each lead has same dimensions

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c

2012.01 - Rev.C

Data Sheet

2SD2704K



Electrical characteristic curves

0 0.2 0.4 0.6 0.8 1 1.2

0.1

10

100

1000

COLLECTOR CURRENT : I

C

(mA)

BASE TO EMITTER VOLTAGE : V

BE(ON)

(V)

Fig.1 Grounded emitter propagation

characteristics (

Ι )

V

CE

=2V

25°C

−40°C

Ta=125°C



COLLECTOR CURRENT : I

C

(mA)

Fig.2 Grounded emitter propagation

characteristics (

ΙΙ )

0 0.2 0.4 0.6 0.8 1 1.2

0.1

10

100

1000

BASE TO EMITTER VOLTAGE : V

BE(ON)

(V)

V

CE

=6V

25°C

−40°C

Ta=125°C



1 10 100 1000

10

100

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.3 DC current gain

vs. collector current ( )

V

CE

=2V



DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.4 DC current gain

vs. collector current ( )

1 10 100 1000

10

100

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

V

CE

=6V



1 10 100 1000

1

100

10

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

COLLECTOR CURRENT : I

C (mA)

Fig.5 Collector-emitter saturation voltage

vs. collector current ( )

I

C

/I

B

=10/1

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(mV)



1 10 100 1000

1

100

10

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

COLLECTOR CURRENT : I

C (mA)

I

C

/I

B

=20/1

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(mV)

Fig.6 Collector-emitter saturation voltage

vs. collector current ( )



1 10 100 1000

1

100

10

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

COLLECTOR CURRENT : IC (mA)

IC/IB=50/1

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(mV)

Fig.7 Collector-emitter saturation voltage

vs. collector current ( )



Fig.8 Base-emitter saturation voltage

vs. collector current ( )

1 10 100 1000

100

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

COLLECTOR CURRENT : I

C

(mA)

I

C

/I

B

=10/1

BASE SATURATION VOLTAGE : V

BE(sat)

(mV)



Fig.9 Base-emitter saturation voltage

vs. collector current ( )

COLLECTOR CURRENT : I

C

(mA)

BASE SATURATION VOLTAGE : V

BE(sat)

(mV)

1 10 100 1000

100

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

I

C

/I

B

=20/1



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c

2012.01 - Rev.C

Data Sheet

2SD2704K

Fig.10 Base-emitter saturation voltage

vs. collector current ( )

COLLECTOR CURRENT : I

C

(mA)

BASE SATURATION VOLTAGE : V

BE(sat)

(mV)

1 10 100 1000

100

1000

10000

Ta= −40°C

Ta=25°C

Ta=125°C

I

C

/I

B

=50/1



Fig.11 Gain bandwidth product

vs. emitter current

1 10 100

1

10000

Ta=25°C

f=50MHz

I

E

=0A

EMITTER CURRENT : I

E

(mA)

TRANSITION FREQUENCY : f

T

(MHz)



Fig.12 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

COLLECTOR OUTPUT CAPACITANCE : Cob

(pF)

EMITTER INPUT CAPACITANCE : Cib

(pF)

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

EMITTER TO BASE VOLTAGE : V

EB

(V)

1 10 100

0.1

1

10

100

Ta=25°C

f=1MHz

I

E

=0A



0.01 0.1 1 10010

0.1

1

100

10

Fig.13 Output-on resistance vs. base current ( )

Ta= 25°C

See Fig.15

ON RESISTANCE : Ron

(Ω)

BASE CURRENT : I

B

(mA)



0.01 0.1 1 10010

0.1

1

100

10

Fig.14 Output-on resistance vs. base current ( )

Ta= 25°C

See Fig.16

ON RESISTANCE : Ron

(Ω)

BASE CURRENT : I

B

(mA)





Ron measurement circuit



Ron= ×R

L

v

0

v

0

v

i−

v

0

R

L

=1kΩ

I

B

Output

Input

100mV(rms)

1V(rms)

f=1kHz

V

i

V

Fig.15 Ron measurement circuit ( )



Ron= ×R

L

v

0

v

0

v

i−

v

0

R

L

=1kΩ

I

B

Output

Input

100mV(rms)

1V(rms)

f=1kHz

V

i

V

Fig.16 Ron measurement circuit ( )



This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

2SD2705STP

2SD2705STP

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