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SI4124DY-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
Vishay Siliconix
Si4124DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
- 0.9
- 0.6
- 0.3
0.0
0.3
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=5mA
T
J
- Junction Temperature (°C)
V
GS(th)
- Variance (V)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.00
0.01
0.02
0.03
012345678 910
T
J
= 25 °C
T
J
= 125 °C
I
D
=14A
V
GS
- Gate-to-Source Voltage (V)
R
DS(on)
- On-Resistance (Ω)
0
34
68
102
136
170
011100.0 0.01 0.1
Power (W)
Time (s)
Safe Operating Area, Junction-to-Ambient
100
1
0.1 1 10 100
0.01
10
0.1
10 ms
100 ms
100 s, DC
BVDSS
Limited
1 ms
100 µs
1 s
10 s
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
I
D
- Drain Current (A)
Limited by R
DS(on)
*
T
A
= 25 °C
Single Pulse
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
www.vishay.com
5
Vishay Siliconix
Si4124DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*, Junction-to-Foot
0
5
10
15
20
25
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating, Junction-to-Foot
0.0
1.4
2.8
4.2
5.6
7.0
0 25 50 75 100 125 15
0
Power (W)
T
C
- Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.00
0.36
0.72
1.08
1.44
1.80
0 25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
www.vishay.com
6
Document Number: 68601
S09-0392-Rev. B, 09-Mar-09
Vishay Siliconix
Si4124DY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68601
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-1
100
0.2
0.1
0.05
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.02
0.05
Single Pulse
P1-P3P4-P6P7-P9

SI4124DY-T1-GE3

Mfr. #:
Buy SI4124DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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