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G88MPB03002C1EU

P1-P3P4-P4
VF40M120C-M3
www.vishay.com
Vishay General Semiconductor
Revision: 02-Dec-13
1
Document Number: 89471
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.46 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 20 A
V
RRM
120 V
I
FSM
250 A
V
F
at I
F
= 20 A 0.64 V
T
J
max. 150 °C
Package ITO-220AB
Diode variation Dual common cathode
PIN 1
PIN 2
PIN 3
TMBS
®
ITO-220AB
1
2
3
VF40M120C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VF40M120C UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
40
A
per diode 20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
250
Voltage rating of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage from thermal to heatsink t = 1 min V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VF40M120C-M3
www.vishay.com
Vishay General Semiconductor
Revision: 02-Dec-13
2
Document Number: 89471
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 20 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.54 -
V
I
F
= 10 A 0.64 -
I
F
= 20 A 0.79 0.89
I
F
= 5 A
T
A
= 125 °C
0.46 -
I
F
= 10 A 0.54 -
I
F
= 20 A 0.64 0.72
Reverse current per diode
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
4-μA
T
A
= 125 °C 3 - mA
V
R
= 120 V
T
A
= 25 °C - 500 μA
T
A
= 125 °C 6 32 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VF40M120C UNIT
Typical thermal resistance per diode R
JC
4.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB VF40M120C-M3/4W 1.76 4W 50/tube Tube
Case Temperature (°C)
Average Forward Rectified Current (A)
50
40
0
0 25 50 75 100 125 150 175
Resistive or Inductive Load
Mounted on Specific Heatsink
30
20
10
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
024681012141618202224
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
VF40M120C-M3
www.vishay.com
Vishay General Semiconductor
Revision: 02-Dec-13
3
Document Number: 89471
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.0001
0.001
0.01
0.1
1
10
100
20 40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
si
g
= 50 mV
p
-
p
10
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
P1-P3P4-P4

G88MPB03002C1EU

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