IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH75N65C3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 60A, V
CE
= 10V, Note 1 25 42 S
C
ie
s
3450 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 307 pF
C
res
70 pF
Q
g(on)
123 nC
Q
ge
I
C
= 75A, V
GE
= 15V, V
CE
= 0.5 • V
CES
24 nC
Q
gc
60 nC
t
d(on)
27 ns
t
ri
67 ns
E
on
2.8 mJ
t
d(off)
93 ns
t
fi
50 ns
E
of
f
1.0 mJ
t
d(on)
26 ns
t
ri
57 ns
E
on
3.3 mJ
t
d(off)
108 ns
t
fi
58 ns
E
off
1.3 mJ
R
thJC
0.20 °C/W
R
thCS
0.21 °C/W
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
Inductive load, T
J
= 150°C
I
C
= 60A, V
GE
= 15V
V
CE
= 400V, R
G
= 3
Note 2
Inductive load, T
J
= 25°C
I
C
= 60A, V
GE
= 15V
V
CE
= 400V, R
G
= 3
Note 2
1 - Gate
2,4 - Collector
3 - Emitter
TO-247 (IXYH) Outline
Reverse Sonic Diode (FRD)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
V
F
I
F
= 50A, V
GE
= 0V, Note 1 2.5 V
T
J
= 150°C 1.8 V
I
RM
T
J
= 150°C 45 A
t
rr
T
J
= 150°C 150 ns
R
thJC
0.45 °C/W
I
F
= 50A, V
GE
= 0V, -di
F
/dt = 900A/μs,
V
R
= 300V
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
