This is information on a product in full production.
January 2014 DocID2060 Rev 6 1/11
HCF4069U
Hex inverter
Datasheet - production data
Features
• Medium-speed operation
t
PD
= 30 ns (typ.) at 10 V
• Standardized symmetrical output
characteristics
• Quiescent current specified up to 20 V
• 5 V, 10 V, and 15 V parametric ratings
• Input leakage current I
I
= 100 nA (max.) at
V
DD
= 18 V and T
A
= 25 ° C
• 100 % tested for quiescent current
• ESD performance
–HBM: 1 kV
– MM: 200 V
–CDM: 1 kV
Applications
• Automotive
• Industrial
• Computer
• Consumer
Description
The HCF4069U is a monolithic integrated circuit
fabricated in metal oxide semiconductor
technology available in the SO14 package. The
HCF4069U consists of six COS/MOS inverter
circuits. This device is intended for all general
purpose inverter applications where the medium
power TTL-drive and logic level conversion
capabilities of circuits such as HCF4049 hex
inverter/buffers are not required.
Table 1. Device summary table
Order code Temperature range Package Packing Marking
HCF4069UM013TR
-55 ° C to +125 ° C SO14
Tape and reel
HCF4069U
HCF4069YUM013TR (1)
-40 ° C to +125 ° C
SO14
(automotive grade)
(1)
1. Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC
Q001 & Q002 or equivalent.
HCF4069Y
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