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BTA316X-800C,127

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BTA316X-800C
3Q Hi-Com Triac
BTA316X-800C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 19 June 2014 6 / 13
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle or half cycle; with heatsink
compound; Fig. 6
- - 4 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
full cycle or half cycle; without heatsink
compound; Fig. 6
- - 5.5 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 55 - K/W
003aab672
10
-1
10
-2
1
10
Z
th(j-h)
(K/W)
10
-3
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
(1)
(2)
(3)
(4)
t
p
P
t
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; T
h
= 25 °C
- 10 - pF
NXP Semiconductors
BTA316X-800C
3Q Hi-Com Triac
BTA316X-800C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 19 June 2014 7 / 13
11. Characteristics
Table 8. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
2 - 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
2 - 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
2 - 35 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 50 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 60 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 50 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 35 mA
V
T
on-state voltage I
T
= 18 A; T
j
= 25 °C; Fig. 10 - 1.3 1.5 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.8 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 535 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
500 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
15 - - A/ms
NXP Semiconductors
BTA316X-800C
3Q Hi-Com Triac
BTA316X-800C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 19 June 2014 8 / 13
T
j
(°C)
- 50 1501000 50
001aac669
1
2
3
0
(1)
(2)
(3)
I
GT
I
GT(25°C)
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
001aab100
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50 1501000 50
001aab099
1
2
3
0
I
H
I
H(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
003aab666
0
10
20
30
40
50
0 0.5 1 1.5 2
V
T
(V)
I
T
(A)
(1) (2) (3)
V
o
= 1.024 V; R
s
= 0.021 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
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BTA316X-800C,127

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Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL-THYR AND TRIACS
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