AOT12N30/AOTF12N30
Symbol Min Typ Max Units
300
350
BV
DSS
/∆TJ
0.29
V/
o
C
1
10
I
GSS
Gate-Body leakage current
±100
nΑ
V
GS(th)
Gate Threshold Voltage
3.4 4 4.5 V
R
DS(ON)
0.31 0.42 Ω
g
FS
11 S
V
SD
0.74 1 V
I
S
Maximum Body-Diode Continuous Current 11.5 A
I
SM
29 A
C
iss
500 632 790 pF
C
oss
55 90 125 pF
C
rss
3 7 11 pF
R
g
1.3 2.7 4.1 Ω
Q
g
10 12.8 16 nC
Q
gs
4.4 nC
Q
gd
4.3 nC
t
D(on)
18 ns
t
r
31 ns
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6A
Reverse Transfer Capacitance
V
GS
=0V, V
DS
=25V, f=1MHz
I
DSS
Zero Gate Voltage Drain Current
V
DS
=300V, V
GS
=0V
Diode Forward Voltage
V
DS
=5V
I
D
=250µA
V
DS
=240V, T
J
=125°C
V
GS
=10V, V
DS
=150V, I
D
=12A,
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=10V, V
DS
=240V, I
D
=12A
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=6A
Forward Transconductance
Zero Gate Voltage Drain Current
ID=250µA, V
GS
=0V
BV
DSS
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
µA
V
DS
=0V, V
GS
=±30V
V
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
t
f
20 ns
t
rr
130 170 205 ns
Q
rr
1 1.3 1.6
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
I
F
=12A,dI/dt=100A/µs,V
DS
=100V
Turn-Off Fall Time
Body Diode Reverse Recovery Charge
I
F
=12A,dI/dt=100A/µs,V
DS
=100V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=3.8A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
Rev 1: Nov 2011 www.aosmd.com Page 2 of 6
