2SB1474
Transistor
Power Transistor (−80V, −4A)
2SB1474
!
Features
1) Darlington connection for a high h
FE
.
2) Built-in resistor between base and emitter.
3) Built-in damper doide.
!
!!
!
Absolute maximum ratings
(Ta=25°C)
Parameter Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-80
-80
-7
-4
1
10
150
-55~+150
Unit
V
V
V
A(DC)
-6
*
A
W
W
(Tc=25˚C)
˚C
˚C
*
Single pulse, Pw
=
100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
!!
!
External dimensions
(Units : mm)
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.5
0.65
0.9
(
1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter
(2) Collector
(1) Base
ROHM : CPT3
EIAJ : SC-63
5.1
!
!!
!Packaging specifications and h
FE
Type 2SB1474
CPT3
1k~10k
TL
2500
Package
h
FE
Code
Basic ordering unit (pieces)
!
!!
!Equivalent circuit
R1 3kΩ
R
2 300Ω
B
C
E
C
B
E
: Base
: Collector
: Emitter
R1 R2
!
!!
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
-80
-80
-
-
-
1000
-
-
-
-
-
-
-1
5000
12
45
-
-
-100
-3
-1.5
10000
-
-
V
V
µA
mA
V
*
1
*
1
*
2
-
MHz
pF
I
C
=-
50µA
I
C
=-
1mA
V
CB
=-
80V
V
EB
=-
5V
I
C
/I
B
=-
2A/-4mA
V
CE
/I
C
=-
3V/-2A
V
CE
=-
5V, I
E
=
0.5A, f
=
10MHz
V
CB
=-
10V, I
E
=
0A, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
*
1 Measured using pulse current.
*
2 Transition frequency of the device.
