PTMA210452EL
PTMA210452FL
Confidential, Limited Internal Distribution
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 11 Rev. 08, 2015-01-14
PTMA210452FL
Package H-34265-8
Wideband RF LDMOS Integrated Power Amplifi er
45 W, 1900 – 2200 MHz
Description
The PTMA210452FL and PTMA210452FL are wideband,
45-watt, 2-stage, LDMOS integrated amplifi ers intended for use
in all typical modulation formats from 1900 to 2200 MHz. These
devices are offered in thermally-enhanced ceramic packages
with solder-friendly plating for cool and reliable operation.
PTMA210452EL
Package H-33265-8
Features
• Designed for wide RF and modulation bandwidths and
low memory effects
• Typical two-carrier WCDMA performance at 2140 MHz,
28 V
- Average output power = 3.2 W
- Linear Gain = 28 dB
- Effi ciency = 10.5%
- IMD3 = –47 dBc
• Typical two-tone performance, 2140 MHz, 28 V
- Output power (PEP) = 45 W at IM3 = –30 dBc
- Effi ciency = 32%
• Capable of handling 10:1 VSWR @ 28 V, 45 W (CW)
output power
• Integrated ESD protection. Meets HBM Class 1B (mini-
mum), per JESD22-A114F
• Thermally-enhanced packages, Pb-free and RoHS com-
pliant, with solder-friendly plating
*See Infi neon distributor for future availability.
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infi neon test fi xture)
V
DD
= 28 V, I
DQ1
= 200 mA (tuned for linearity), I
DQ2
= 450 mA (tuned for linearity & effi ciency), P
OUT
= 3.2 W average,
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Input Return Loss IRL — –16 –10 dB
Gain G
ps
26.5 28 — dB
Drain Efficiency
η
D
9 10.5 — %
Intermodulation Distortion, 2-channel WCDMA IMD –43 –47 — dBc
