Jan2N3019 Datasheet Jantxv2N3019, Jan2N3019, JANS2N3019 | P1-P3

2N3019

Compliant

LOW POWER NPN SILICON TRANSISTOR

Qualified per MIL-PRF-19500/391

Qualified Levels:

JAN, JANTX,

JANTXV, and JANS

DESCRIPTION

This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability

applications. Microsemi also offers numerous other transistor products to meet higher and

lower power ratings with various switching speed requirements in both through-hole and

surface-mount packages.

TO-5 Package

Also available in:

TO-39 (TO-205AD)

(short-leaded)

2N3019S

TO-46 (TO-206AB)

(leaded)

2N3057A

TO-18 (TO-206AA)

(leaded)

2N3700

UB package

(leaded)

2N3700UB

Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

• JEDEC registered 2N3019 number.

• JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391.

• Rad hard levels are also available per MIL-PRF-19500/391.

(For RHA datasheet see

JANSD2N3019.)

• RoHS compliant by design.

APPLICATIONS / BENEFITS

• Long leaded TO-5 package.

• Lightweight.

• Low power.

• Military and other high-reliability applications.

MAXIMUM RATINGS @ T

A

= +25

o

C unless otherwise noted

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Parameters/Test Conditions

Symbol

Value

Unit

Junction and Storage Temperature

T

J

and T

STG

-65 to +200

o

C

Thermal Resistance Junction-to-Ambient

R

ӨJA

195

o

C/W

Thermal Resistance Junction-to-Case

R

ӨJC

30

o

C/W

Collector-Emitter Voltage

V

CEO

80

V

Collector-Base Voltage

V

CBO

140

V

Emitter-Base Voltage

V

EBO

7.0

V

Collector Current

I

C

1.0

A

Total Power Dissipation: @ T

A

= +25

o

C

(1)

@ T

C

= +25

o

C

(2)

P

D

0.8

5.0

W

Notes: 1. Derate linearly 4.6 mW/°C for T

A

≥ +25 °C.

2. Derate linearly 28.6 mW/°C for T

C

≥ +25 °C.

2N3019

MECHANICAL and PACKAGING

• CASE: Hermetically sealed, kovar base, nickel cap.

• TERMINALS: Gold plate, solder dip (Sn63/Pb37) available upon request. NOTE: Solder dip will eliminate RoHS compliance.

• MARKING: Part number, date code, manufacturer’s ID and serial number.

• POLARITY: NPN.

• WEIGHT: Approximately 1.064 grams.

• See

Package Dimensions on last page.

PART NOMENCLATURE

JAN 2N3019

Reliability Level

JAN = JAN level

JANTX = JANTX level

JANTXV = JANTXV level

JANS = JANS level

Blank = Commercial

JEDEC type number

(see Electrical Characteristics

table)

SYMBOLS & DEFINITIONS

Symbol

Definition

f

Frequency

I

B

Base current (dc)

I

E

Emitter current (dc)

T

A

Ambient temperature

T

C

Case temperature

V

CB

Collector to base voltage (dc)

V

CE

Collector to emitter voltage (dc)

V

EB

Emitter to base voltage (dc)

2N3019

ELECTRICAL CHARACTERISTICS @ T

A

= +25 °C, unless otherwise noted

Parameters / Test Conditions Symbol Min. Max. Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Current

I

C

= 30 mA

V

(BR)CEO

80 V

Collector-Base Cutoff Current

V

CB

= 140 V

I

CBO

10 µA

Emitter-Base Cutoff Current

V

EB

= 7 V

I

EBO1

10 µA

Collector-Emitter Cutoff Current

V

CE

= 90 V

I

CES

10

ηA

Emitter-Base Cutoff Current

V

EB

= 5.0 V

I

EBO2

10

ηA

ON CHARACTERISTICS

Forward-Current Transfer Ratio

I

C

= 150 mA, V

CE

= 10 V

I

C

= 0.1 mA, V

CE

= 10 V

I

C

= 10 mA, V

CE

= 10 V

I

C

= 500 mA, V

CE

= 10 V

I

C

= 1.0 A, V

CE

= 10 V

h

FE

100

50

90

50

15

300

Collector-Emitter Saturation Voltage

I

C

= 150 mA, I

B

= 15 mA

I

C

= 500 mA, I

B

= 50 mA

V

CE(sat)

0.2

0.5

V

Base-Emitter Saturation Voltage

I

C

= 150 mA, I

B

= 15 mA

V

BE(sat)

1.1

V

DYNAMIC CHARACTERISTICS

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Small-Signal Short-Circuit Forward Current Transfer Ratio

I

C

= 1.0 mA, V

CE

= 5.0 V, f = 1.0 kHz

h

fe

80

400

Magnitude of Small-Signal Short-Circuit Forward Current

Transfer Ratio

|h

fe

|

I

C

= 50 mA, V

CE

= 10 V, f = 20 MHz

5.0

20

Output Capacitance

C

obo

pF

V

CB

= 10 V, I

E

= 0, 100 kHz ≤ f ≤ 1.0 MHz

12

Input Capacitance

C

ibo

pF

V

EB

= 0.5 V, I

C

= 0, 100 kHz ≤ f ≤ 1.0 MHz

60

Jan2N3019

Jan2N3019

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