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DPH30IS600HI

P1-P3P4-P5
DPH30IS600HI
E
1 2 3
R
D
L
L1
Q
2x b
2x b2
b4
W
A
A2
c
A1
e
E1
D1
D2
D3
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und L
max
.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except L
max
.
min max min max
A 4.83 5.21 0.190 0.205
A1 2.29 2.54 0.090 0.100
A2 1.91 2.16 0.075 0.085
b 1.14 1.40 0.045 0.055
b2 1.91 2.20 0.075 0.087
b4 2.92 3.24 0.115 0.128
c 0.61 0.83 0.024 0.033
D 20.80 21.34 0.819 0.840
D1 15.75 16.26 0.620 0.640
D2 1.65 2.15 0.065 0.085
D3 20.30 20.70 0.799 0.815
E 15.75 16.13 0.620 0.635
E1 13.21 13.72 0.520 0.540
e 10.90 BSC 0.429 BSC
L 19.81 20.60 0.780 0.811
L1 3.81 4.38 0.150 0.172
Q 5.59 6.20 0.220 0.244
R 4.25 5.50 0.167 0.217
W - 0.10 - 0.004
Dim.
Millimeter Inches
1 3
Outlines ISOPLUS247
IXYS reserves the right to change limits, conditions and dimensions.
20160916bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DPH30IS600HI
0.0 0.8 1.6 2.4 3.2 4.0
20
40
60
8
0
0 100 200 300 400 500 600
40
50
60
70
80
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
K
f
T
VJ
[°C]
-di
F
/dt [A/μs]
t [ms]
0 200 400 600
0
200
400
600
800
1000
4
6
8
10
12
14
0 200 400 600
4
8
12
16
2
0
0 200 400 600
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Q
rr
[μC]
V
F
id-]V[
F
/dt [A/μs]
Z
thJC
[K/W]
I
F
= 60 A
30 A
15 A
I
RM
Q
rr
V
FR
t
fr
T
VJ
= 150°C
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recov. current
I
RM
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
rr
, I
RM
versus T
VJ
Fig. 5 Typ. reverse recov. time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recov. voltage
V
FR
& time t
fr
versus di
F
/dt
Fig. 8 Transient thermal impedance junction to case
25°C
I
F
[A
]
-di
F
/dt [A/μs]
I
RM
[A]
t
rr
[ns]
-di
F
/dt [A/μs]
t
fr
[ns]
V
FR
[V]
0 200 400 600
0
4
8
12
16
20
24
E
rec
[
μJ]
-di
F
/dt [A/μs]
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
I
F
= 15 A
30 A
60 A
I
F
= 60 A
30 A
15 A
I
F
= 60 A
30 A
15 A
T
VJ
= 125°C
V
R
= 400 V
T
VJ
= 125°C
V
R
= 400 V
T
VJ
= 125°C
V
R
= 400 V
T
VJ
= 125°C
V
R
= 400 V
I
F
= 30 A
T
VJ
= 125°C
V
R
= 400 V
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions.
20160916bData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
P1-P3P4-P5

DPH30IS600HI

Mfr. #:
Buy DPH30IS600HI
Manufacturer:
Littelfuse
Description:
Diodes - General Purpose, Power, Switching 30 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
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