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XP161A11A1PR-G
Power MOSFET
PRODUCTS PACKAGE ORDER UNIT
XP161A11A1PR SOT-89 1,000/Reel
XP161A11A1PR-G
(*)
SOT-89 1,000/Reel
PARAMETER SYMBOL RATINGS UNITS
Drain - Source Voltage Vdss 30 V
Gate - Source Voltage Vgss ±20 V
Drain Current (DC) Id 4 A
Drain Current (Pulse) Idp 16 A
Reverse Drain Current Idr 4 A
Channel Power Dissipation *
Pd 2 W
Channel Temperature Tch 150 ℃
Storage Temperature Tstg -55~150 ℃
■GENERAL DESCRIPTION
The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance :
Rds(on)=0.065
Ω
@ Vgs=10V
:
Rds(on)=0.105
Ω
@ Vgs=4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage : 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package : SOT-89
Environmentally Friendly : EU RoHS Compliant, Pb Free
■PIN CONFIGURATION/
MARKING
■PRODUCT NAME
■
BSOLUTE M
XIMUM R
TINGS
■EQUIVALENT CIRCUIT
Ta = 25℃
* When implemented on a ceramic PCB
ETR1122_003
G : Gate
S : Source
D : Drain
1 1
1 x
* x represents production lot number.
The “-G” suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
