3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM150CL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
November. 2012
TOTAL SYSTEM
Symbol Parameter Conditions Ratings Unit
V
CC(PROT)
Supply Voltage Protected by
SC
V
D
=13.5V ~ 16.5V
Inverter Part, T
j
=+125°C Start
800 V
V
CC(surge)
Supply Voltage (Surge)
Applied between : P-N, Surge value
1000 V
T
stg
Storage Temperature
-40 ~ +125 °C
V
iso
Isolation Voltage
60Hz, Sinusoidal, Charged part to Base plate,
AC 1min, RMS
2500 V
*: T
C
measurement point is just under the chip.
THERMAL RESISTANCE
Limits
Symbol Parameter Conditions
Min. Typ. Max.
Unit
R
th(j-c)Q
Inverter, IGBT (per 1 element) (Note.1) - - 0.15
R
th(j-c)F
Thermal Resistance
Inverter, FWDi (per 1 element) (Note.1) - - 0.23
R
th(c-f)
Contact Thermal Resistance
Case to fin, (per 1 module)
Thermal grease applied (Note.1)
- -
0.023
°C/W
Note.1: If you use this value, R
th(f-a)
should be measured just under the chips.
PM150CL1A120 PM150CL1A120 350G
* ”350G” is printed on the label
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Symbol Parameter Conditions
Min. Typ. Max.
Unit
T
j
=25°C
- 1.65 2.15
V
CE(sat)
Collector-Emitter Saturation
Voltage
V
D
=15V, I
C
=150A
V
CIN
=0V, Pulsed (Fig. 1)
T
j
=125°C
- 1.85 2.35
V
V
EC
FwDi Forward Voltage -I
C
=150A, V
D
=15V, V
CIN
= 15V (Fig. 2)
- 2.3 3.3
V
t
on
0.3 0.8 2.0
t
rr
- 0.3 0.8
t
c(on)
- 0.4 1.0
t
off
- 1.2 2.8
t
c(off)
Switching Time
V
D
=15V, V
CIN
=0V←→15V
V
CC
=600V, I
C
=150A
T
j
=125°C
Inductive Load (Fig. 3,4)
- 0.4 1.2
s
T
j
=25°C
- - 1
I
CES
Collector-Emitter Cut-off
Current
V
CE
=V
CES
, V
D
=15V , V
CIN
=15V (Fig. 5)
T
j
=125°C
- - 10
mA
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