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BAS16LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12
1 Publication Order Number:
BAS16LT1/D
BAS16L, SBAS16L
Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
100 V
Peak Forward Current I
F
200 mA
Non−Repetitive Peak Forward Surge
Current 60 Hz
I
FSM(surge)
500 mA
Repetitive Peak Forward Current
(Note 3)
I
FRM
1.0 A
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 1 s
I
FSM
36.0
18.0
6.0
3.0
0.7
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1)
T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Square Wave, f = 40 kHz, PW = 200 ns
Test Duration = 60 s, T
J
= 25°C prior to surge.
Device Package Shipping
†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 8
MARKING
DIAGRAM
1
2
3
BAS16LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
BAS16LT3G SOT−23
(Pb−Free)
10000/Tape & Reel
1
A6 M G
G
A6 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
SBAS16LT1G SOT−23
(Pb−Free)
3000/Tape & Reel
SBAS16LT3G SOT−23
(Pb−Free)
10000/Tape & Reel
www.onsemi.com
BAS16L, SBAS16L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 100 V)
(V
R
= 75 Vdc, T
J
= 150°C)
(V
R
= 25 Vdc, T
J
= 150°C)
I
R
−
−
−
1.0
50
30
mAdc
Reverse Breakdown Voltage
(I
BR
= 100 mAdc)
V
(BR)
100 − Vdc
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
715
855
1000
1250
mV
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 2.0 pF
Forward Recovery Voltage
(I
F
= 10 mAdc, t
r
= 20 ns)
V
FR
− 1.75 Vdc
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, R
L
= 50 W)
t
rr
− 6.0 ns
Stored Charge
(I
F
= 10 mAdc to V
R
= 5.0 Vdc, R
L
= 500 W)
Q
S
− 45 pC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS16L, SBAS16L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
0.1
V
F
, FORWARD VOLTAGE (V)
0.01
10
0
V
R
, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
10 20 30 40
50
0.62
0
V
R
, REVERSE VOLTAGE (V)
0.60
0.56
0.50
0.48
C
D
, DIODE CAPACITANCE (pF)
246 8
I
F
, FORWARD CURRENT (mA)
Figure 2. V
F
vs. I
F
Figure 3. I
R
vs. V
R
Figure 4. Capacitance
I
R
, REVERSE CURRENT (μA)
0.1
1.0
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
85°C
55°C
150°C
125°C
25°C
-40°C
-55°C
60 70
-40°C
150°C
125°C
85°C
55°C
25°C
0.52
0.54
0.58
1357
85°C
Cap
P1-P3P4-P4

BAS16LT1G

Mfr. #:
Buy BAS16LT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching 75V 200mA
Lifecycle:
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