PS2832-1,-4,PS2833-1,-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
–50
–25
0
25
50
75
100
10 000
100 000
1 000
100
10
1
Collector to Emitter Dark Current ICEO (nA)
Ambient Temperature TA (˚C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Ambient Temperature TA (˚C)
Diode Power Dissipation PD (mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
50
75
100
100
80
60
40
20
0
0.8 mW/˚C
0.6 mW/˚C
PS2832-4
PS2833-4
PS2832-1
PS2833-1
1.2 mW/˚C
PS2832-1, -4
PS2833-1, -4
25 50
75
100
120
100
80
60
40
20
0
Transistor Power Dissipation PC (mW)
Ambient Temperature TA (˚C)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
100
50
10
5
1
0.5
0.1
0.7 0.9 1.1 1.3 1.50.8 1.0 1.2 1.4
Forward Current IF (mA)
Forward Voltage VF (V)
FORWARD CURRENT vs.
FORWARD VOLTAGE
0 ˚C
–25 ˚C
–50 ˚C
TA = +100 ˚C
+60 ˚C
+25 ˚C
Collector Current IC (mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1234
5
100
50
10
5
1
0
1 mA
5 mA
3 mA
2 mA
IF = 0.5 mA
Collector Current IC (mA)
Collector Saturation Voltage VCE (sat) (V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
0.4 0.6 0.8 1.0
1.2
1.4 1.6
100
50
10
5
1
IF = 0.5 mA
1 mA
5 mA
2 mA
3 mA
CTR = 1 068 %
2 290 %
4 360 %
V
CEO = 300 V
Data Sheet PN10257EJ01V0DS
7
